DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-02 | 8541409000 | Photosensitive semiconductor devices, TYPE SEMICONDUCTOR - SILICON. Used in the manufacture electronic modules and dresses for various devices. NOT FOR MILITARY USE. : DESCRIPTION: COMPACT LOW-VOLTAGE SOLID-STATE SWITCHES OPTO-HOUSING | *** | PHILIPPINES | 50 | 47474,5 | *** | ***** | ***** |
2017-09-04 | 8541290000 | TRANSISTOR, P / N IPW60R017C7XKSA1, HIGH VOLTAGE MOSFET, the breakdown voltage of the drain-source of 600 V, the power dissipation 227VT applicable in fabrication of electronic Aparatura, server and telecommunication power supplies, adapters: LEU | *** | PHILIPPINES | 0.17 | 249,58 | *** | ***** | ***** |
2017-09-04 | 8541100009 | DIODES: semi-conductor for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Are packaged in blister packs in tape on the coil ON SEMICONDUCTOR ON SEMICONDUCTOR 1N5340BRLG 1N5340BRLG 1N5340BRLG 8000 ON SEMIC | *** | PHILIPPINES | 12.91 | 958,29 | *** | ***** | ***** |
2017-09-04 | 8541100009 | DIODES: semi-conductor for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Are packaged in blister packs in tape on the coil ON SEMICONDUCTOR ON SEMICONDUCTOR MBR130LSFT1G MBR130LSFT1G MBR130LSFT1G 3000 | *** | PHILIPPINES | 0.13 | 144,4 | *** | ***** | ***** |
2017-09-05 | 8541100009 | Semiconductor diodes With the function of stabilizing the level of tension in the scheme of the electricity meter, DO NOT SCRAP ELECTRIC, DO NOT WASTE; NO MILITARY OR DUAL-USE / / Not for equipment operating in explosive atmospheres / ST MICROELECTRONIC | *** | PHILIPPINES | 0.74 | 405 | *** | ***** | ***** |
2017-09-06 | 8541100009 | PROTECTION DIODES "SMBJ30A-TR", Predna. To suppress the surge voltage in the consumer, industrial electronics and telecommunications. TYPE SEMICONDUCTOR SILICON. : MAX 600W power dissipation, breakdown voltage of 36,8V. INTENDED FOR suppressed | *** | PHILIPPINES | 0.44 | 200 | *** | ***** | ***** |
2017-09-06 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source of 200 V, 372 A LEAKAGE CURRENT, power dissipation | *** | PHILIPPINES | 36 | 10731 | *** | ***** | ***** |
2017-09-06 | 8541100009 | DIODES, EXCEPT photodiodes and light-emitting diodes: diodes - a semiconductor wafer is cut into the crystal (located in the same building) for devices of industrial electronics DIODES - the semiconductor wafer is cut into the crystal (Location | *** | PHILIPPINES | 5.4 | 2724 | *** | ***** | ***** |
2017-09-06 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS RADIOFREQUENCY MOSFETs with channel N TYPE FOR MOUNTING HOLE PCB HELD DEVICES FOR INDUSTRIAL ELECTRONICS, POWER scattering | *** | PHILIPPINES | 1.69 | 1288,73 | *** | ***** | ***** |
2017-09-06 | 8541100009 | DIODES, EXCEPT photodiodes and light-emitting diodes: diodes - a semiconductor wafer is cut into the crystal (located in the same building) for devices of industrial electronics DIODES - the semiconductor wafer is cut into the crystal (Location | *** | PHILIPPINES | 0.35 | 29,7 | *** | ***** | ***** |