DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541210000 | TRANSISTORS power dissipation LESS THAN 1W. Maximum voltage 30V RESERVOIR: SHENZHEN QIYAO PLASTIC & ELECTRONIC CO, LTD.. MMUN2211LT1 (SOT-23) 1,000 | *** | CHINA | 0.06 | 171,3 | *** | ***** | ***** |
2017-09-01 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 Watt (NOT SCRAP ELECTRIC OR ELECTRICAL COMPONENTS FOR CIVIL USE) TRANSISTOR SEMICONDUCTOR power dissipation 0,3VT for consumer electronics. TYPE semisimple | *** | CHINA | 4 | 1004,75 | *** | ***** | ***** |
2017-09-01 | 8541210000 | Bipolar transistors, power 0,9VT. For electronic devices. Packed in a cardboard box together with other goods. NOT FOR RETAIL. : ASUS ASUS ASUS 07005-A0340000 NO 59 | *** | CHINA | 0.59 | 20,06 | *** | ***** | ***** |
2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, PNP-CHANNEL, power dissipation 0.5 | *** | CHINA | 1.19 | 90 | *** | ***** | ***** |
2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 0.57 | *** | CHINA | 0 | 4 | *** | ***** | ***** |
2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 0.54 | *** | CHINA | 0.01 | 10,2 | *** | ***** | ***** |
2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, NPN-CHANNEL, power dissipation 0.3 | *** | CHINA | 0.03 | 2,1 | *** | ***** | ***** |
2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 0.7 | *** | CHINA | 0 | 1,45 | *** | ***** | ***** |
2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 0.9 | *** | CHINA | 0.02 | 20 | *** | ***** | ***** |
2017-09-03 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 W, (NOT SCRAP ELECTRIC) CLASSIFICATION CODE 63 4012, SM. ADDITION. TRANSISTOR SEMICONDUCTOR power dissipation 0,7VT for consumer electronics. TYPE SEMICONDUCTOR - the singleton | *** | CHINA | 0.11 | 549,7 | *** | ***** | ***** |