DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,30VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TRANSISTOR SEMICONDUCTOR POWER RA | *** | THAILAND | 0.97 | 285,76 | *** | ***** | ***** |
2017-09-08 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,3VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Are packaged in blister packs in tape on the coil ON SEMICONDUCTOR ON SEMICONDUCTOR MMBTA06 | *** | THAILAND | 12.84 | 3882,43 | *** | ***** | ***** |
2017-09-08 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,3VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel NEXPERIA BV NEXPERIA PUMD9.115 PUMD9.11 | *** | THAILAND | 0.81 | 336,08 | *** | ***** | ***** |
2017-09-09 | 8541210000 | Bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 65 V, the maximum collector current of 100 mA. CASING SOT-23-3. Power dissipation 0.3 Tues. Located on the tape, packed in plastic bags. : ON SEMICONDU | *** | THAILAND | 0.01 | 0,8 | *** | ***** | ***** |
2017-09-09 | 8541210000 | PNP bipolar transistors TYPE SMD HELD FOR DEVICES INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 65 V, a collector current of 100 mA, the power dissipation of 0.3 TSR. CASING SOT-23-3. LOCATED ON TAPE PACKED: In | *** | THAILAND | 0.01 | 0,9 | *** | ***** | ***** |
2017-09-09 | 8541210000 | MOSFETs with channel N / P SMD TYPE USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the source-drain 60, LEAKAGE CURRENT 0.51 A, the power dissipation of 0.96 CS. BODY SOIC-8. Located on the tape, the UPA: KO | *** | THAILAND | 0.02 | 24,64 | *** | ***** | ***** |
2017-09-09 | 8541210000 | MOSFETs with channel P type intended for devices of industrial electronics. Breakdown voltage of the drain-source of 100 V, LEAKAGE CURRENT 0.12 A 360 MW. CASING SOT-23-3. LOCATED in the tape, packed in a plastic bag. : MICROCHIP TECH | *** | THAILAND | 0.05 | 41,27 | *** | ***** | ***** |
2017-09-20 | 8541210000 | TRANSISTORS: SEMICONDUCTOR POWER TRANSISTOR FOR DISPERSION 0.2 consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packaged in blister packs Ribbon coil ROHM CO., LTD. ROHM DTD143EKT146 DTD143EKT1 | *** | THAILAND | 0.01 | 55,83 | *** | ***** | ***** |
2017-09-21 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,3VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel MODULE TRANSISTOR SEMICONDUCTOR cardinality | *** | THAILAND | 0.51 | 175,71 | *** | ***** | ***** |
2017-09-27 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 W, used in the system of industrial electronics bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 50 V, maximum collector current 0.5 | *** | THAILAND | 0.01 | 1,99 | *** | ***** | ***** |