Electro Import Data of Russia

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Lookup import statistics of Electro under HS Code 8541210000, which Russia imports from Thailand. Study market price & market size of Electro along with market share of Russian companies importing Electro from Thailand

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DATE HS_CODE Product Description TrademarkCountry Net Weight Statistical Cost Place Shipper NameConsignee Name
2017-09-018541210000FET TRANSISTOR SEMICONDUCTOR power dissipation 0,30VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TRANSISTOR SEMICONDUCTOR POWER RA***THAILAND0.97285,76*************
2017-09-088541210000FET TRANSISTOR SEMICONDUCTOR power dissipation 0,3VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Are packaged in blister packs in tape on the coil ON SEMICONDUCTOR ON SEMICONDUCTOR MMBTA06***THAILAND12.843882,43*************
2017-09-088541210000FET TRANSISTOR SEMICONDUCTOR power dissipation 0,3VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel NEXPERIA BV NEXPERIA PUMD9.115 PUMD9.11***THAILAND0.81336,08*************
2017-09-098541210000Bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 65 V, the maximum collector current of 100 mA. CASING SOT-23-3. Power dissipation 0.3 Tues. Located on the tape, packed in plastic bags. : ON SEMICONDU***THAILAND0.010,8*************
2017-09-098541210000PNP bipolar transistors TYPE SMD HELD FOR DEVICES INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 65 V, a collector current of 100 mA, the power dissipation of 0.3 TSR. CASING SOT-23-3. LOCATED ON TAPE PACKED: In***THAILAND0.010,9*************
2017-09-098541210000MOSFETs with channel N / P SMD TYPE USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the source-drain 60, LEAKAGE CURRENT 0.51 A, the power dissipation of 0.96 CS. BODY SOIC-8. Located on the tape, the UPA: KO***THAILAND0.0224,64*************
2017-09-098541210000MOSFETs with channel P type intended for devices of industrial electronics. Breakdown voltage of the drain-source of 100 V, LEAKAGE CURRENT 0.12 A 360 MW. CASING SOT-23-3. LOCATED in the tape, packed in a plastic bag. : MICROCHIP TECH***THAILAND0.0541,27*************
2017-09-208541210000TRANSISTORS: SEMICONDUCTOR POWER TRANSISTOR FOR DISPERSION 0.2 consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packaged in blister packs Ribbon coil ROHM CO., LTD. ROHM DTD143EKT146 DTD143EKT1***THAILAND0.0155,83*************
2017-09-218541210000FET TRANSISTOR SEMICONDUCTOR power dissipation 0,3VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel MODULE TRANSISTOR SEMICONDUCTOR cardinality***THAILAND0.51175,71*************
2017-09-278541210000Transistors, EXCEPT phototransistor power dissipation less than 1 W, used in the system of industrial electronics bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 50 V, maximum collector current 0.5***THAILAND0.011,99*************


Our electro import data of Russia and market research report covers market priceof electro and market share of Russian companies. This helps you to do market analysis on the basis of price, company, etc. efficiently and gain knowledge on market size of electro in Russia. Few shipment records with a small number of important columns from Russia import data of electro are given above. Other hidden fields such as Russian Importer Name with Address, Foreign Importer Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of electro. To view more shipment records of electro import data of Russia, you can set a filter by Country Name, HS Code and Place.

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