Electro Import Data of Russia

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Lookup import statistics of Electro under HS Code 8541290000, which Russia imports from Taiwan China. Study market price & market size of Electro along with market share of Russian companies importing Electro from Taiwan China

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DATE	HS_CODE	Product Description	Trademark	Country	Net Weight	Statistical Cost	Place	Shipper Name	Consignee Name
2017-09-04	8541290000	SEMICONDUCTOR DEVICES: Field transistors TYPE SEMICONDUCTOR - GAAS (gallium arsenide) is not a phototransistor, power dissipation 7,7VT, designed for use in industrial electronic power amplifier; NOT SCRAP: Electrical	***	TAIWAN CHINA	0.65	5716,32	***	*****	*****
2017-09-05	8541290000	TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source 950, CURRENT LEAKAGE 38 A, the power dissipation	***	TAIWAN CHINA	0.16	186,68	***	*****	*****
2017-09-06	8541290000	TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. VOLTAGE Drain-Source Breakdown 70 V, 35 A LEAKAGE CURRENT, POWER 40 CS. lint	***	TAIWAN CHINA	18.8	5141,75	***	*****	*****
2017-09-07	8541290000	SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. 3 A permissible current,	***	TAIWAN CHINA	0.07	1,52	***	*****	*****
2017-09-07	8541290000	SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current of 100 A	***	TAIWAN CHINA	0.25	5,62	***	*****	*****
2017-09-07	8541290000	SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 6.25	***	TAIWAN CHINA	3.06	69,63	***	*****	*****
2017-09-07	8541290000	SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-channel available power dissipation 2.5	***	TAIWAN CHINA	13.46	397,33	***	*****	*****
2017-09-07	8541290000	SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-channel available power dissipation 2.5	***	TAIWAN CHINA	8.87	198,6	***	*****	*****
2017-09-07	8541290000	SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, PNP-CHANNEL, power dissipation 3	***	TAIWAN CHINA	9.74	318,06	***	*****	*****
2017-09-07	8541290000	SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. 3 A permissible current,	***	TAIWAN CHINA	15.18	340,16	***	*****	*****

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Our electro import data of Russia and market research report covers market priceof electro and market share of Russian companies. This helps you to do market analysis on the basis of price, company, etc. efficiently and gain knowledge on market size of electro in Russia. Few shipment records with a small number of important columns from Russia import data of electro are given above. Other hidden fields such as Russian Importer Name with Address, Foreign Importer Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of electro. To view more shipment records of electro import data of Russia, you can set a filter by Country Name, HS Code and Place.

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