DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-05 | 8541290000 | Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS | ROHM, FARNELL, INFINEON, NEXPERIA | *** | 52.56 | 578,16 | MOSCOW | ***** | ***** |
2017-09-11 | 8541290000 | Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS | INFINEON, NXP | *** | 119.35 | 1312,85 | MOSCOW | ***** | ***** |
2017-09-11 | 8541290000 | Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS | INFINEON | *** | 72.04 | 1793,8 | MOSCOW | ***** | ***** |
2017-09-11 | 8541290000 | Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS | INFINEON | *** | 71.73 | 2044,31 | MOSCOW | ***** | ***** |
2017-09-19 | 8541290000 | Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS | INFINEON, NEXPERIA, ON SEMICONDUCTOR | *** | 54.28 | 1546,98 | MOSCOW | ***** | ***** |
2017-11-02 | 8541290000 | A field effect transistor to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE | INFINEON TECHNOLOGIES | *** | 3 | 863,82 | MOSCOW | ***** | ***** |
2017-11-02 | 8541290000 | A field effect transistor to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE | INFINEON TECHNOLOGIES | *** | 4 | 607,59 | MOSCOW | ***** | ***** |
2017-11-02 | 8541290000 | Bipolar transistor power dissipation of 500W to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT227, ART. VS-GA200SA60UP - 160SHT. | VISHAY EUROPE | *** | 7 | 4254,82 | MOSCOW | ***** | ***** |
2017-11-02 | 8541290000 | FET power dissipation 125W to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO220, ART. STP11NK50Z - 200 pieces. | ST MICROELECTRONICS | *** | 0.7 | 79,87 | MOSCOW | ***** | ***** |
2017-11-02 | 8541290000 | Bipolar transistor power dissipation 275VT to enhance signals to the RADIO ELECTRONIC ITEMS, ART. F475R06W1E3BOMA 1 - 15pcs. | INFINEON TECHNOLOGIES | *** | 0.8 | 321,35 | MOSCOW | ***** | ***** |