DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-26 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR | MICRON | *** | 88.32 | 163474,8 | ST PETERSBURG | ***** | ***** |
2017-11-17 | 8542323900 | MICROCHIP electronic integrated monolithic HAVE encryption function (CRYPTOGRAPHY) - dynamic random access memory (DRAM), with a storage capacity 4GB (not radiation resistant) .PRIMENENIE: BUILDING radio electronic equipment for | ABSENT | *** | 0.2 | 220,5 | ST PETERSBURG | ***** | ***** |
2017-11-18 | 8542323900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: | ANALOG DEVICES | *** | 0.475 | 945,66 | ST PETERSBURG | ***** | ***** |
2017-11-23 | 8542323900 | MICROCHIP electronic integrated monolithic HAVE encryption function (CRYPTOGRAPHY) - dynamic random access memory (DRAM), with a storage capacity 8GB (not radiation resistant) .PRIMENENIE: BUILDING radio electronic equipment for | WITHOUT A TRADEMARK | *** | 0.02 | 534,87 | ST PETERSBURG | ***** | ***** |
2017-11-23 | 8542323900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: | ABSENT | *** | 0.194 | 95 | ST PETERSBURG | ***** | ***** |
2017-11-23 | 8542323900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: | MICRON | *** | 0.133 | 2196 | ST PETERSBURG | ***** | ***** |
2017-11-23 | 8542323900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - dynamic random access memory (DRAM) SDRAM with a storage capacity of 2 Gbit. (Operating temperature range: -40 ... + 95 ° C) (NOT SCRAP ELECTRIC) | WITHOUT A TRADEMARK | *** | 0.016 | 82,08 | ST PETERSBURG | ***** | ***** |
2017-11-27 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS not integrated with other components of: dynamic random access memory (DRAM), collected, SINGLE, memory 4 HIT; NOT SCRAP | SAMSUNG | *** | 4.7 | 8092,5 | ST PETERSBURG | ***** | ***** |
2017-11-27 | 8542323900 | Electronic integrated circuits Monolithic: dynamic random access memory (DRAM), collected, SINGLE, memory 2Gbps; NOT SCRAP ELECTRIC NOT MILITARY | SAMSUNG | *** | 1.25 | 3600 | ST PETERSBURG | ***** | ***** |
2017-11-28 | 8542323900 | Electronic integrated circuits - Synchronous Dynamic Random Access Memory "K4T1G164QJ-BIE7000" double speed data transfer, memory capacity 1GB (UNITED 64MX16), 1.8V supply voltage, DRAM "K4T1G164QJ-BIE7000" Predna | SAMSUNG | *** | 2.79 | 1134 | ST PETERSBURG | ***** | ***** |