DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-02 | 8542326100 | An integrated circuit electrically erasable programmable read only memory (EEPROM) with a storage capacity is limited to 512 MBIT. : Used in the electronics desktop METEOSTANTSII.MIKROSKHEMY MEMORY SRAM, SPI INTERFACE CAPACITY: 256 kb, MAX HR | *** | THAILAND | 0.03 | 176,48 | *** | ***** | ***** |
2017-09-07 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - STORAGE DEVICE TYPE FLASH EEPROM MEMORY WITH VOLUME LESS THAN 512 MBIT. (NOT SCRAP ELECTRIC) with a storage capacity of 32 MBIT. (Operating temperature range: -40 ... + 85 ° C) ADESTO TECHNOLOGIES CORPORATIO | *** | THAILAND | 0.2 | 414,5 | *** | ***** | ***** |
2017-09-08 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....) Of the electronic integrals | *** | THAILAND | 0.38 | 400,58 | *** | ***** | ***** |
2017-09-08 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....) Of the electronic integrals | *** | THAILAND | 0.18 | 991,03 | *** | ***** | ***** |
2017-09-08 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....) Of the electronic integrals | *** | THAILAND | 1.16 | 2511,25 | *** | ***** | ***** |
2017-09-12 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - TYPE STORAGE DEVICE WITH FLASH EEPROM MEMORY CAPACITY 32 MBIT. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC): MICROCHIP TECHNOLOGY INC. WITHOUT TOV. MARK B / M SST26VF032B-104I / SM | *** | THAILAND | 0.52 | 1094,26 | *** | ***** | ***** |
2017-09-27 | 8542326100 | Electronic integrated circuits Monolithic FLASH - EPROM ES, HAVE encryption function (CRYPTOGRAPHY): - in flash memory, not radiation, NOT SCRAP ELECTRIC, SIZE MEMORY 128MBIT.PRIMENENIE: CONSTRUCTION OF RADIO-ELECTRONIC EQUIPMENT FOR: SURFACE. | *** | THAILAND | 0.01 | 38,22 | *** | ***** | ***** |
2017-11-08 | 8542326100 | MICROCHIP electronic integrated solid - 16-bit digital microcontroller program memory of 256 kbps and clock frequency of 32 MHz. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC) (NOT AN OPTION sredst CM. | WITHOUT A TRADEMARK | THAILAND | 2.484 | 4188,1 | READING | ***** | ***** |