DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT / NOT JOM ELECTRICAL NOT CONTAIN ENCRYPTION AND FUNCTIONS KRITOGRAFII / MICROCIRCUIT MONOLITHIC INTEGRATED ELECTRONIC FLASH EPROM, 8M CAPACITY * 8bit input voltage 1.8 / 3.3V SAMSUNG ELECTRONICS C | *** | UNITED STATES | 0.64 | 1929,52 | *** | ***** | ***** |
2017-09-01 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT / NOT JOM ELECTRICAL NOT CONTAIN ENCRYPTION AND FUNCTIONS KRITOGRAFII / MICROCIRCUIT MONOLITHIC INTEGRATED ELECTRONIC FLASH EEPROM MEMORY, 128 MB, VOLTAGE 2.7-3.6V INTEL INC. INTEL INTEL | *** | UNITED STATES | 0.64 | 1296,22 | *** | ***** | ***** |
2017-09-07 | 8542326100 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 512MEGABIT for wide application in industrial equipment NOT FOR MILITARY | *** | UNITED STATES | 0.16 | 164,34 | *** | ***** | ***** |
2017-09-09 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory TSIs | *** | UNITED STATES | 0.05 | 22,36 | *** | ***** | ***** |
2017-09-09 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory TSIs | *** | UNITED STATES | 0.04 | 22,36 | *** | ***** | ***** |
2017-09-09 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory TSIs | *** | UNITED STATES | 0.07 | 38,7 | *** | ***** | ***** |
2017-09-09 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory TSIs | *** | UNITED STATES | 0.1 | 251,69 | *** | ***** | ***** |
2017-09-09 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory TSIs | *** | UNITED STATES | 0.03 | 21,42 | *** | ***** | ***** |
2017-09-10 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory capacity 128 MBIT is approved for use in telecommunications equipment. LIVE PIT | *** | UNITED STATES | 0.01 | 186,12 | *** | ***** | ***** |
2017-09-10 | 8542326100 | Electronic integrated circuits, ELEKTRICHESKISTIRAEMYE, with a storage capacity of up to 512 Mbit At INSTALLATION FOR ELECTRONIC CARD, packed in cardboard boxes, inside a box smaller in size WHICH ARE INTEGRATED ELECTRONIC CIRCUITS PACKED IN PLA: PT | *** | UNITED STATES | 0.67 | 438,32 | *** | ***** | ***** |