DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-07 | 8542326900 | Integrated circuits, monolithic FLASH EPROM ES, HAS encryption function (CRYPTOGRAPHY), not radiation. NOT SCRAP ELECTRIC, Memory Size 4GB. APPLICATION: CONSTRUCTION electronic equipment for surface mounting on a printed circuit | WITHOUT A TRADEMARK | *** | 0.28 | 1023,12 | ST PETERSBURG | ***** | ***** |
2017-11-07 | 8542326900 | MICROCHIP electronic integrated solid - memories such as FLASH EEPROM since volume 8 Gb. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC) | MICRON | *** | 0.014 | 45,44 | ST PETERSBURG | ***** | ***** |
2017-11-10 | 8542326900 | Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL | MICRON | *** | 7.98 | 5520 | ST PETERSBURG | ***** | ***** |
2017-11-10 | 8542326900 | Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL | MICRON | *** | 5.32 | 3680 | ST PETERSBURG | ***** | ***** |
2017-11-16 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: | ABSENT | *** | 0.01 | 12 | ST PETERSBURG | ***** | ***** |
2017-11-16 | 8542326900 | Electronic integrated circuits - in flash memory "NOR" "MT25QL256ABA8ESF-0SIT" With a memory capacity of 256 Mbits supply voltage 2,7-3,6V intended for universal use in consumer, automotive and industrial electronics. RANGE | MICRON | *** | 0.09 | 41,35 | ST PETERSBURG | ***** | ***** |
2017-11-18 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: | MICRON | *** | 0.098 | 66 | ST PETERSBURG | ***** | ***** |
2017-11-21 | 8542326900 | Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL | MICRON | TAIWAN CHINA | 46.55 | 32200 | ST PETERSBURG | ***** | ***** |
2017-11-23 | 8542326900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - STORAGE DEVICE WITH FLASH EEPROM MEMORY CAPACITY 2 Gbps. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC) | WITHOUT A TRADEMARK | *** | 0.016 | 91,2 | ST PETERSBURG | ***** | ***** |
2017-11-24 | 8542326900 | Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL | MICRON | TAIWAN CHINA | 25.27 | 17480 | ST PETERSBURG | ***** | ***** |