DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-01 | 8541290000 | Field-effect transistors, power dissipation of 100 W, a voltage source-drain 100 V, semiconductor - silicon is designed for logic circuits to control the parameters of their energy consumption, | INFINEON TECHNOLOGIES, GERMANY | *** | 0.4 | 1085,5 | MOSCOW | ***** | ***** |
2017-11-09 | 8541100009 | DIODES two-electrode semiconductor rectifier, for instrument. They have different conductivity as a function of the direction of the electric current. TYPE SEMICONDUCTOR -DVUOKIS GERMANY (GEO2) (10 pieces per 195 UPAK) (NOT SCRAP | VISHAY | *** | 1.1 | 44,75 | MOSCOW | ***** | ***** |
2017-11-10 | 8541409000 | Photosensitive semiconductor devices, including photovoltaic cells, collected or not collected in the module, whether or not incorporated into panels; Light-emitting diodes, other (goods are imported for maintenance and repair EARLIER | GERMANY | *** | 1 | 85,86 | MOSCOW | ***** | ***** |
2017-11-14 | 8541290000 | Transistor IGBT MODULE (electronic components), dissipation of 450 W, collector-emitter voltage 1.2 kV, current 100 A SEMICONDUCTOR - SILICON, SCOPE - INDUSTRIAL ELECTRONICS, | IXYS, GERMANY | *** | 0.06 | 64,42 | MOSCOW | ***** | ***** |
2017-11-28 | 8541500000 | SEMICONDUCTOR DEVICES: | CHENYANG TECHNOLOGIES, GERMANY | *** | 0.92 | 3332,32 | MOSCOW | ***** | ***** |
2017-11-28 | 8541290000 | Field-effect transistors, power dissipation of 100 W, a voltage source-drain 100 V, semiconductor - silicon is designed for logic circuits to control the parameters of their energy consumption, | INFINEON TECHNOLOGIES, GERMANY | *** | 0.228 | 1805,2 | MOSCOW | ***** | ***** |