DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-06 | 8542326900 | MICROCHIP electronic integrated - storage devices that do not have the encryption function (CRYPTOGRAPHY) without encryption (cryptographic) means flash PROM ES with a storage capacity BOL. 512 MBIT NOT SCRAP ELECTRIC, FOR INDUSTRIAL MIC | *** | TAIWAN CHINA | 111.52 | 40777,12 | *** | ***** | ***** |
2017-09-07 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 8 GB is approved for use in telecommunications equipment. Supply voltage | *** | TAIWAN CHINA | 0.01 | 5 | *** | ***** | ***** |
2017-09-08 | 8542326900 | MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity of 16 Gbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): MICRON TECHNOLOGY WITHOUT TRADEMARK MICRON MT29F16G08AJADAWP-IT: D B / | *** | TAIWAN CHINA | 0.12 | 689,99 | *** | ***** | ***** |
2017-09-13 | 8542326900 | Memory chip monolithic integrated electrically erasable programmable, memory type NAND FLASH, VOLUME 1 GB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special T | *** | TAIWAN CHINA | 3.2 | 7360 | *** | ***** | ***** |
2017-09-14 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 1 GB is approved for use in telecommunications equipment. Supply voltage | *** | TAIWAN CHINA | 0 | 135 | *** | ***** | ***** |
2017-09-14 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 16 GB is approved for use in telecommunications equipment. supply voltage | *** | TAIWAN CHINA | 0.01 | 5,5 | *** | ***** | ***** |
2017-09-26 | 8542326900 | ES FLASH EPROM (NAND FLASH) - CRYSTAL SILICON SEMICONDUCTOR MEMORY CAPACITY 128 Gbps, 2.7-3.6 V, the packaged used in the manufacture of chips for digital satellite receivers, ARE NOT FLASH EPROM ES (NAND FLASH) CROWBAR elect | *** | TAIWAN CHINA | 4.1 | 15416,34 | *** | ***** | ***** |
2017-09-28 | 8542326900 | OTHER integrated circuits, chips FLASH MEMORY: 4GB. DOES NOT CONTAIN encryption function and cryptographic algorithms. SANDISK CORPORATION SANDISK SANDISK SDIN7DP2-4G 2084 | *** | TAIWAN CHINA | 0.46 | 7460,72 | *** | ***** | ***** |
2017-09-30 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 16 GB is approved for use in telecommunications equipment. supply voltage | *** | TAIWAN CHINA | 0.02 | 31,5 | *** | ***** | ***** |
2017-11-15 | 8542326900 | MICROCHIP electronic integrated - storage devices that do not have the encryption function (CRYPTOGRAPHY) without encryption (cryptographic) means flash PROM ES with a storage capacity BOL. 512 MBIT NOT SCRAP ELECTRIC, FOR INDUSTRIAL | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY | TAIWAN CHINA | 42.64 | 17887,43 | TAIPEI | ***** | ***** |