DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541210000 | N-channel MOS transistors operating under saturated ASSEMBLY WITH BLOCKS temperature protection, overcurrent protection and voltage is intended to distribute power to the Car Alarm System MOSFET drain-source voltage Transit | *** | GERMANY | 0.2 | 639,29 | *** | ***** | ***** |
2017-09-02 | 8541210000 | Transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE FET power dissipation 0.83VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistor power dissipation | *** | SINGAPORE | 2 | 277,28 | *** | ***** | ***** |
2017-09-07 | 8541210000 | N-channel MOS transistors operating under saturated ASSEMBLY WITH BLOCKS temperature protection, overcurrent protection and voltage is intended to distribute power to the Car Alarm System MOSFET drain-source voltage Transit | *** | TAIWAN CHINA | 0.71 | 3172,74 | *** | ***** | ***** |
2017-09-11 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.25W to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistors MOSCHNOS | *** | CHINA | 1 | 127,99 | *** | ***** | ***** |
2017-09-11 | 8541210000 | Transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE Bipolar Transistor Power Dissipation 0.5W to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased TO92 FET power dissipation | *** | CHINA | 2 | 240,56 | *** | ***** | ***** |
2017-09-11 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.3VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistors power | *** | CHINA | 2 | 284,19 | *** | ***** | ***** |
2017-09-18 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.83VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased TO92 bipolar transistors power | *** | MALAYSIA | 2 | 247,64 | *** | ***** | ***** |
2017-09-19 | 8541210000 | ELECTRONIC COMPONENTS FOR GENERAL PURPOSE OF BLOCKS FOR ELECTRONIC EQUIPMENT: 3-PIN NPN-bipolar transistor FOR MOUNTING superficialis, the operating voltage 45 V, the power dissipation of 250 mW, the collector current of the MA 500; : NEXPER | *** | CHINA | 1.1 | 55,84 | *** | ***** | ***** |
2017-09-21 | 8541210000 | ELECTRONIC COMPONENTS FOR GENERAL PURPOSE OF BLOCKS FOR ELECTRONIC EQUIPMENT: 3-PIN N-POLAR transistor WORKING VOLTAGE 20V operating current of 1.2 A, the nominal resistance of 0.25 OM pulse CURRENT 7.4 A POWER Russ | *** | TAIWAN CHINA | 0.75 | 708,07 | *** | ***** | ***** |
2017-09-23 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.35VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistors MOSCHNOS | *** | PHILIPPINES | 3 | 327,8 | *** | ***** | ***** |