DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-01 | 8542326100 | MONOLITHIC INTEGRATED MICROCHIP / FLASH electrically erasable programmable read only memory (FLASH-EPROM ES) VOLUME 16MBIT, SERIES SST39VF1602C; Used in the device of automotive electronics, medical equipment, SST39V | *** | TAIWAN CHINA | 0.02 | 789,29 | *** | ***** | ***** |
2017-09-08 | 8542326100 | MONOLITHIC INTEGRATED MICROCHIP / FLASH electrically erasable programmable read only memory (FLASH-EPROM ES) C SPI INTERFACE, VOLUME 16MBIT, SERIES AT45DB161E; Used in the device voice recognition and AT45DB161E-SHD-T; | *** | TAIWAN CHINA | 0.75 | 3555,3 | *** | ***** | ***** |
2017-09-13 | 8542326100 | Memory chip monolithic integrated electrically erasable programmable TYPE MEMORY NOR FLASH, VOLUME 64 MB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special T | *** | TAIWAN CHINA | 10.3 | 4600 | *** | ***** | ***** |
2017-09-13 | 8542326100 | Memory chip monolithic integrated electrically erasable programmable TYPE MEMORY NOR FLASH, VOLUME 4 MB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special TE | *** | TAIWAN CHINA | 0.9 | 400 | *** | ***** | ***** |
2017-09-13 | 8542326100 | Memory chip monolithic integrated electrically erasable programmable TYPE MEMORY NOR FLASH, VOLUME 32 MB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special T | *** | TAIWAN CHINA | 28.5 | 12880 | *** | ***** | ***** |
2017-09-13 | 8542326100 | Memory chip monolithic integrated electrically erasable programmable TYPE MEMORY NOR FLASH, VOLUME 32 MB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special T | *** | TAIWAN CHINA | 2.8 | 1440 | *** | ***** | ***** |
2017-09-13 | 8542326100 | Integrated circuits, monolithic, digital, flash electrically erasable programmable read-only memory (flash EEPROM) W25Q64JVSSIQ, VOLUME 64Mbit, 8-pin input voltage 2.7-3.6V, TV MODELS FOR PROM.SBORKI UE43LS003AUXRU, HAS 1107-002574 | *** | TAIWAN CHINA | 1.3 | 684,12 | *** | ***** | ***** |
2017-09-20 | 8542326100 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 512MEGABIT for wide application in industrial equipment NOT FOR MILITARY | *** | TAIWAN CHINA | 0.28 | 968,28 | *** | ***** | ***** |
2017-09-27 | 8542326100 | Memory chip monolithic integrated electrically erasable programmable TYPE MEMORY NOR FLASH, OBEM4 MB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) VEHICLES HAS especially those | *** | TAIWAN CHINA | 1.85 | 784 | *** | ***** | ***** |
2017-09-27 | 8542326100 | Memory chip monolithic integrated electrically erasable programmable TYPE MEMORY NOR FLASH, VOLUME 32 MB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special T | *** | TAIWAN CHINA | 35.2 | 14800 | *** | ***** | ***** |