DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542326900 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 8192MEGABIT for wide application in industrial equipment NOT WAR H | *** | CHINA | 0.01 | 101,68 | *** | ***** | ***** |
2017-09-01 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT having no encryption function (CRYPTOGRAPHY): IC chip, a semiconductor, digital, programmable, electrically erasable read only memory, is mounted on the plateau YAVLYAETS | *** | KOREA REPUBLIC OF | 86.4 | 49608,72 | *** | ***** | ***** |
2017-09-03 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory DEVICE | *** | CHINA | 1.02 | 2807,42 | *** | ***** | ***** |
2017-09-03 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT having no encryption function (CRYPTOGRAPHY): IC chip, a semiconductor, digital, programmable, electrically erasable read only memory, is mounted on the plateau YAVLYAETS | *** | KOREA REPUBLIC OF | 21.12 | 11552,64 | *** | ***** | ***** |
2017-09-04 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT -schemes INTEGRATED REMEMBERING: INTEGRATED CIRCUITS REMEMBERING: an electrically erasable programmable read only memory ES FLASH EPROM memory capacity C -64 Gbit -Flash MEMORY VDIC-NAND HIGH | *** | CHINA | 0.8 | 2661,88 | *** | ***** | ***** |
2017-09-04 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT -schemes INTEGRATED REMEMBERING: INTEGRATED CIRCUITS REMEMBERING: an electrically erasable programmable read only memory ES FLASH EPROM memory capacity C -64 Gbit -Flash MEMORY VDIC-NAND HIGH | *** | CHINA | 3.75 | 168014,25 | *** | ***** | ***** |
2017-09-04 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT -schemes INTEGRATED REMEMBERING: INTEGRATED CIRCUITS REMEMBERING: an electrically erasable programmable read only memory ES FLASH EPROM memory capacity C -64 Gbit -Flash MEMORY VDIC-NAND HIGH | *** | CHINA | 7.55 | 336118,14 | *** | ***** | ***** |
2017-09-05 | 8542326900 | Electronic integrated circuits, electrically erasable programmable read-only memory (EEPROM), for applications in microelectronics: chip flash memory 1.8V 1G-BIT MICRON TECHNOLOGY INC. 172 MICRON MICRON PC28F00AP30TFA | *** | CHINA | 0.84 | 1189,96 | *** | ***** | ***** |
2017-09-08 | 8542326900 | Electronic integrated circuits, flash memory, solid, single, not combined with other components not JOM electrical equipment, not for fire control, NOT MILITARY: electrically erasable programmable read-only memories | *** | SINGAPORE | 2.8 | 80899,99 | *** | ***** | ***** |
2017-09-11 | 8542326900 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 1024MEGABIT for wide application in industrial equipment NOT WAR H | *** | THAILAND | 0.11 | 116,08 | *** | ***** | ***** |