DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-03 | 8541409000 | Photosensitive semiconductor devices for an automatic analyzer for laboratory research (NOT SCRAP ELECTRIC): CGM MODULE, Generation 3 (used in the analyzer VELOCITY FOR READING PARAMETERS OF URINE, SUCH AS SPECIFIC TIGHTLY | *** | UNITED STATES | 0.3 | 1042,44 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Field-effect transistors, power dissipation 104 W, 20 V, semiconductor - silicon are designed for logic circuits to control the parameters of their ENERGY,: VISHAY INTERTECHNOLOGY VISHAY INTERTECHNOLOGY, CHINA SIR440DP-T1-GE3 300 | *** | UNITED STATES | 0.05 | 650,64 | *** | ***** | ***** |
2017-09-25 | 8541100009 | DIOD MMPN080150-C51 MACOM, represents several shunt PIN diodes, integrated into a microstrip line designed for use in microwave devices attenuator. Basic parameters: Frequency range: 2 - 35 GHz; MAXIMUM: Feedback | *** | UNITED STATES | 0.08 | 4920 | *** | ***** | ***** |
2017-09-29 | 8541210000 | FETs 700 MW power dissipation, voltage 20 V, SEMICONDUCTOR - SILICON FOR LOGIC CIRCUITS ARE TO CONTROL PARAMETERS OF ENERGY,: INFINEON TECHNOLOGIES INFINEON TECHNOLOGIES, MALAYSIA IRLML2402TRPBF 605 | *** | UNITED STATES | 0.02 | 78,35 | *** | ***** | ***** |
2017-09-29 | 8541290000 | Field-effect transistors, power dissipation of 2.5 W, a voltage source-drain -30 V, semiconductor - silicon are designed for logic circuits to control the parameters of their power, field effect transistors, power dissipation of 2.5 W, voltage and | *** | UNITED STATES | 0.05 | 48,15 | *** | ***** | ***** |