DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-01 | 8541290000 | Field-effect transistors, power dissipation 32 W, a voltage source-drain 600, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption, | INFINEON TECHNOLOGIES, CHINA | *** | 0.004 | 4,32 | MOSCOW | ***** | ***** |
2017-11-01 | 8541290000 | Field-effect transistors, power dissipation of 100 W, a voltage source-drain 100 V, semiconductor - silicon is designed for logic circuits to control the parameters of their energy consumption, | INFINEON TECHNOLOGIES, GERMANY | *** | 0.4 | 1085,5 | MOSCOW | ***** | ***** |
2017-11-01 | 8541290000 | Field-effect transistors, power dissipation of 235 watts, the voltage source-drain 400, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption, | ON SEMICONDUCTOR, CHINA | *** | 0.225 | 103,55 | MOSCOW | ***** | ***** |
2017-11-02 | 8541100009 | Other diodes, photodiodes THAN OR light emitting diode (LED) FOR ELECTRICITY METERS / NOT SCRAP, NOT WASTE / not double, not a military one. PURPOSE / NOT for equipment operating in explosive atmospheres / NOT FOR VEHICLES / | DIODES INCORPORATED | *** | 78.63 | 8535,55 | MOSCOW | ***** | ***** |
2017-11-02 | 8541290000 | Other transistors, phototransistor EXCEPT FOR THE PRODUCTION OF ELECTRICITY METERS FOR PRODUCTION OF ELECTRICITY METERS / NOT SCRAP, NOT WASTE / not double, not a military one. PURPOSE / NOT for equipment operating in explosive atmospheres / | INTERNATIONAL RECTIFIER | *** | 1.8 | 1200 | MOSCOW | ***** | ***** |
2017-11-02 | 8541210000 | Field-effect transistors, power dissipation of 700 MW, voltage -45 V Semiconductors - SILICON is designed for logic circuits to control the parameters of their energy consumption, | DIODES INC, CHINA | *** | 0.006 | 6,28 | MOSCOW | ***** | ***** |
2017-11-08 | 8541290000 | Field-effect transistors, power dissipation 158 VT, the voltage source-drain 75, semiconductor - silicon are designed for logic circuits to control the parameters of their energy consumption, 118 | NEXPERIA, PHILIPPINES | *** | 0.011 | 29,62 | MOSCOW | ***** | ***** |
2017-11-08 | 8541290000 | FET, voltage 60 V, Resistance of the IOM 23, dissipation of 110 W, current 48 A SEMICONDUCTOR - SILICON FOR LOGIC CIRCUITS ARE TO CONTROL PARAMETERS OF ENERGY, | INFINEON TECHNOLOGIES, CHINA | *** | 0.05 | 63,39 | MOSCOW | ***** | ***** |
2017-11-08 | 8541290000 | Field-effect transistors, power dissipation of 150 W, a voltage source-drain 1.2 KV, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption, | STMICROELECTRONICS, MALAYSIA | *** | 0.009 | 15,5 | MOSCOW | ***** | ***** |
2017-11-09 | 8541409000 | Semiconductor devices, opto-coupler, consisting of an LED and the photodetector AS FUNCTION With micro electro-optical signal conversion for the production of electricity meters, ARTICLE 4N33SR2M - 12000SHT | FAIRCHILD | *** | 13.2 | 1710 | MOSCOW | ***** | ***** |