DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-17 | 8541210000 | TRANSISTORS Power Dissipation 0.395 BT TYPE SEMICONDUCTOR SILICON-: USAGE PATTERNS SWITCHING POWER SUPPLY, DISTRIBUTION OF ELECTRICITY SUPPLY DRIVERS SVETODIODOV.VID SEMICONDUCTOR -KREMNIEVY, VIEW PEREHODA- N, IS USED FOR THE PURPOSE OF PRODUCTION | *** | CHINA | 0.02 | 185,34 | *** | ***** | ***** |
2017-09-21 | 8541210000 | MOSFET "FDN5618P" SERIES POWER TRENCH P-CHANNEL, dissipation of 0.5W, the breakdown voltage of 60V drain-source, gate-source voltage 20V, constant drain current 1.2 A, for use in DC-DC converter, the switch: TPA | *** | CHINA | 0.09 | 165 | *** | ***** | ***** |
2017-09-26 | 8541210000 | TRANSISTORS 0.7VT power dissipation, which is a radio-electronic components of a semiconductor material is used for amplifying, oscillating, switching and converting electrical signals. TRANSISTORS APPLY TO AMPLIFIER: TPA | *** | CHINA | 21.57 | 6938,19 | *** | ***** | ***** |
2017-11-05 | 8541210000 | TRANSISTORS 0.7VT power dissipation, which is a radio-electronic components of a semiconductor material is used for amplifying, oscillating, switching and converting electrical SIGNALOV.TRANZISTORY APPLY amplifying | ABSENT | CHINA | 8.2 | 3999,9 | SHENZHEN | ***** | ***** |
2017-11-11 | 8541210000 | TRANSISTORS 0.7VT power dissipation, which is a radio-electronic components of a semiconductor material is used for amplifying, oscillating, switching and converting electrical SIGNALOV.TRANZISTORY APPLY amplifying | ABSENT | CHINA | 6.2 | 4404,69 | SHENZHEN | ***** | ***** |