| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL dissipated power 100 W, the voltage source-drain 100 V, the drain current of 25 A, HULL TYPE TO-252-3, CLASSIFICATION CODE 3417831 is for use in switching power supply CONVERTING | *** | CHINA | 1.26 | 683,79 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | Power MOSFET "STD12NF06LT4" Series, STRIP FETT With 30W power dissipation, drain-source voltage 60V, gate-source voltage 16V, continuous leakage current of 12A intended for use in the device switching. TYPE SEMICONDUCTOR: MOS | *** | CHINA | 1.28 | 754,38 | *** | ***** | ***** |
| 2017-09-07 | 8541290000 | Transistors, radio-electronic components of a semiconductor material is used for amplifying, oscillating, switching and converting electrical signals. TRANSISTORS APPLY amplifier circuits, signal generators, N- TYPE ASSEMBLY OF TWO | *** | CHINA | 0.02 | 0,83 | *** | ***** | ***** |
| 2017-09-12 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation, 3.1 Tu, the voltage source-drain 60, the drain current of 100 A, HULL TYPE 8VSON, CLASSIFICATION CODE 3417831 is for use in switching power supply, transformation | *** | CHINA | 0.01 | 33,56 | *** | ***** | ***** |
| 2017-09-15 | 8541290000 | TRAHZISTORY is mounted on the printed circuit board is used for surface mounting in switching equipment to create the necessary level of tension in electric TSEPYAH.NE ARE photoresistor. : TYPE SEMICONDUCTOR-3-X KANALNYY.MOSCHN | *** | CHINA | 0.8 | 519,17 | *** | ***** | ***** |
| 2017-09-15 | 8541290000 | Transistor does not phototransistor MODULE transistor consisting of a transistor (2 pcs) (NOT phototransistor)) for switching the load current frequency converters VLT. , 1200, 300A, 75 kW power dissipation, DANFOSS POWER ELECTRONICS A / S DANFOSS | *** | CHINA | 0.43 | 114,84 | *** | ***** | ***** |
| 2017-09-25 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL dissipated power 150 W, the voltage source-drain 80 V, the drain current of 90 A TYPE BODY TO-252, CODE OKP 3417831 is for use in switching power supply, transformation | *** | CHINA | 0.23 | 106,93 | *** | ***** | ***** |
| 2017-09-29 | 8541290000 | Powerful field of P-channel MOS transistors "IRF7328TRPBF" With power dissipation 2 W, NEPREREVNYM leakage current of 8A and drain-source voltage 30V is designed for use on a circuit switching and protection of rechargeable battery in a pulsed source: CDC | *** | CHINA | 2.76 | 3895,5 | *** | ***** | ***** |
| 2017-11-23 | 8541290000 | A field effect transistor is an electronic key in the switching power supply, inverter, in a control system of electric drive. 600V | TRADEMARK NO | CHINA | 9.14 | 2716,56 | NANGZHOU BINZHIANG CHINA | ***** | ***** |
| 2017-11-29 | 8541290000 | TRAHZISTORY is mounted on the printed circuit board is used for surface mounting in switching equipment to create the necessary level of tension in electric TSEPYAH.NE ARE photoresistor. | JOTRIN ELECTRONICS | CHINA | 21.94 | 2428,88 | SHENZHEN | ***** | ***** |