DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-11 | 8541210000 | FET power dissipation 0.75VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23, ART. SI2323DDS-T1-GE 3 - 3,000 pcs. : VISHAY EUROPE VISHAY EUROPE 0 | *** | CHINA | 4 | 506,18 | *** | ***** | ***** |
2017-09-12 | 8541210000 | TRANSISTOR MODEL "ATF-38143-BLKG" - 100 pcs. PRODUCT made in the case SOT-343. 0.58VT total dissipation (Watts) and drain-source voltage of 4.5 V. information on the type SEMICONDUCTOR absence. : AVAGO TECHNOLOGIES AVAGO 0 | *** | MEXICO | 0.05 | 64,84 | *** | ***** | ***** |
2017-09-18 | 8541210000 | TRANSISTOR MODEL "NTUD3169CZT5G" - 166 pcs. The product is a field effect transistor with a maximum power of 200 MW DISPERSION AND voltage between the drain-source to 20V made in the case SOT-963 and has 6 CONCLUSIONS. : Information on the type of semiconductors Otsu | *** | CHINA | 0 | 45,27 | *** | ***** | ***** |
2017-09-19 | 8541210000 | Bipolar transistor power dissipation 0.3VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23, ART. MMBT5551LT1G - 500pcs. : ON SEMICONDUCTOR ON SEMICONDUCTOR 0 | *** | TAIWAN CHINA | 0.05 | 7,72 | *** | ***** | ***** |
2017-09-23 | 8541210000 | Bipolar transistor power dissipation 0.35VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23, ART. MMBT2907A - 3,000 pcs. : FAIRCHILD SEMICONDUCTOR FAIRCHILD SEMICONDUCTOR 0 | *** | PHILIPPINES | 0.5 | 59,31 | *** | ***** | ***** |
2017-09-25 | 8541210000 | TRANSISTOR. MODEL "BC848ALT1G" -883 PCS. The product is a bipolar transistor with the maximum power DISPERSION 225 milli-watts and a voltage between the collector-emitter to 30 volts. : Semiconductors NPN-type. STRUCTURAL made in the case SAT-23 | *** | THAILAND | 0.02 | 38,4 | *** | ***** | ***** |
2017-11-02 | 8541210000 | FET power dissipation 0.35VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23, ART. MMBFJ201 - 3,000 pcs. | FAIRCHILD SEMICONDUCTOR | *** | 1 | 117,36 | MOSCOW | ***** | ***** |
2017-11-02 | 8541210000 | Bipolar transistor power dissipation 0.33VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23, ART. BCR512E6327HTSA 1 - 3,000 pcs. | INFINEON TECHNOLOGIES | *** | 0.6 | 62,87 | MOSCOW | ***** | ***** |
2017-11-10 | 8541210000 | Bipolar transistor power dissipation 0.625VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased TO92, ART. BC516_D27Z - 2000pcs. | FAIRCHILD SEMICONDUCTOR | SINGAPORE | 1 | 213,25 | HONG KONG | ***** | ***** |
2017-11-14 | 8541210000 | FET power dissipation 0.83VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased TO92, ART. BS170 - 2000pcs. | FAIRCHILD SEMICONDUCTOR | *** | 0.6 | 64,05 | MOSCOW | ***** | ***** |