DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-08 | 3818009000 | CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 3 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor | *** | CHINA | 0.17 | 3617,25 | *** | ***** | ***** |
2017-09-08 | 3818009000 | CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 2 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor | *** | CHINA | 0.03 | 1559,25 | *** | ***** | ***** |
2017-09-12 | 3818001000 | Silicon is alloyed with a plate round shapes of different diameters, for use in electronics for the production of photovoltaic converters and SOLID-STATE ELECTRONIC DEVICES: //-ART.RLM500-01 - 218SHT, ART.RLM501-01 - 216SHT | *** | JAPAN | 27 | 1354,08 | MOSCOW | ***** | ***** |
2017-09-18 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer MKRSY00B, 150MM, N-TYPE, <100>, PHOSPHORUS, 3,6 - 5,4 OHM-CM, 675 +/- 15UM, PRIME WAFER; Diameter: 150 mm; METHOD OF GROWING: CZ; CONDUCTIVITY TYPE: N; Went | *** | CHINA | 14.4 | 2955,47 | *** | ***** | ***** |
2017-09-18 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished, gratuitous POSTAKVA AS SAMPLES: silicon wafer MKRSY00B, 150MM, N-TYPE, <100>, PHOSPHORUS, 3,6 - 5,4 OHM-CM, 675 +/- 15UM, PRIME WAFER; Diameter: 150 mm; MET | *** | CHINA | 18 | 3789,85 | *** | ***** | ***** |
2017-11-17 | 3818009000 | CHEMICAL COMPOUNDS LEGIROVANNYE: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 3 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and | ABSENT | *** | 0.093 | 1947,75 | ST PETERSBURG | ***** | ***** |