DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,54VT for consumer electronic devices. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in plastic bags (scattering of small) INFINEON TECHNOLOGIES AG INFI | *** | JAPAN | 0 | 2,24 | *** | ***** | ***** |
2017-09-02 | 8541210000 | Bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 80 V, the maximum collector current of 1.5 A, power dissipation 0.9W, CASING TO-226-3. LOCATED in the tape is packaged in a plastic bag. : STMICROELECTRON | *** | MALAYSIA | 0.2 | 77,26 | *** | ***** | ***** |
2017-09-06 | 8541210000 | KEY TRANSISTORS BIPOLAR Power Dissipation 0.8 W INSTALLATION ON BOARD programmable controller in INDIV-packaging to cardboard boxes, plastic bags KEY TRANSISTORS BIPOLAR Bipolar Transistor KEY ART. IRFM150-5 | *** | TAIWAN CHINA | 0.5 | 580,8 | *** | ***** | ***** |
2017-09-06 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,35VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in plastic bags (scattering of small) ON SEMICONDUCTOR ON SEMICONDU | *** | ISRAEL | 0 | 3,04 | *** | ***** | ***** |
2017-09-07 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,36VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in plastic bags (placers AVERAGE) TRANSISTOR SEMICONDUCTOR | *** | MALAYSIA | 2.11 | 887,02 | *** | ***** | ***** |
2017-09-09 | 8541210000 | Bipolar transistor NPN TYPE DEVICES FOR INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 65 V, the maximum collector current of 100 mA. CASING SOT-23-3. Power dissipation 0.3 Tues. Located on the tape, packed in plastic bags. : ON SEMICONDU | *** | THAILAND | 0.01 | 0,8 | *** | ***** | ***** |
2017-09-09 | 8541210000 | MOSFETs with channel P type intended for devices of industrial electronics. Breakdown voltage of the drain-source of 100 V, LEAKAGE CURRENT 0.12 A 360 MW. CASING SOT-23-3. LOCATED in the tape, packed in a plastic bag. : MICROCHIP TECH | *** | THAILAND | 0.05 | 41,27 | *** | ***** | ***** |
2017-09-12 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,625VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in plastic bags (scattering of small) TRANSISTOR SEMICONDUCTOR | *** | CHINA | 0.01 | 13,1 | *** | ***** | ***** |
2017-09-12 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,225VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in plastic bags (scattering of small) TRANSISTOR SEMICONDUCTOR | *** | CHINA | 0.03 | 8,18 | *** | ***** | ***** |
2017-09-13 | 8541210000 | KEY TRANSISTORS BIPOLAR Power Dissipation 0.3 W INSTALLATION ON BOARD programmable controller, in INDIV-packaging to cardboard boxes, plastic bags KEY TRANSISTORS BIPOLAR Bipolar Transistor KEY ART. 14100240 | *** | BELGIUM | 0.1 | 8,3 | *** | ***** | ***** |