| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-02 | 8541210000 | TRANSISTORS Power Dissipation 0.197 BT TYPE SEMICONDUCTOR SILICON-: TRANSITION TYPE - NPN.VID POLUPROVODNIKA- KREMNIEVYY.PRIMENENIE: SILICON BIPOLAR RADIO FREQUENCY NPN transistors BFU730F designed for use in low-noise amplifier in the micro | *** | THAILAND | 0.02 | 341,43 | *** | ***** | ***** |
| 2017-09-24 | 8541210000 | TRANSISTORS Power Dissipation 0.25 W TYPE SEMICONDUCTOR SILICON-: APPLY TO COUNTER ENERGORESURSOV.VID TRANSITION - NPN .VID POLUPROVODNIKA- KREMNIEVYY.PRIMENENIE: - suitable for use in switching circuits and amplifiers GENERAL PURPOSE .SVOYS | *** | CHINA | 0.04 | 44,7 | *** | ***** | ***** |
| 2017-09-26 | 8541210000 | TRANSISTORS dissipation of less than 1W / NOT SCRAP ELECTRIC / silicon transistors FOR A low-noise small-signal and signal amplifier, voltage 6V, power dissipation 0.27VT CALIFORNIA EASTERN LABORATORIES CEL 2SC5010-T1-A | *** | TAIWAN CHINA | 3.78 | 6863,32 | *** | ***** | ***** |
| 2017-09-26 | 8541210000 | TRANSISTORS 0.7VT power dissipation, which is a radio-electronic components of a semiconductor material is used for amplifying, oscillating, switching and converting electrical signals. TRANSISTORS APPLY TO AMPLIFIER: TPA | *** | CHINA | 21.57 | 6938,19 | *** | ***** | ***** |
| 2017-11-22 | 8541210000 | Bipolar Transistor: "BCR08PNH6327" With NPN / PNP junction, C Power Dissipation 0.25 W, collector-emitter voltage 50V, the constant current of 100 mA, for use in the various switches, amplifiers and microelectronics. FLOOR TYPE | INFINEON | *** | 16.54 | 6997,29 | ST PETERSBURG | ***** | ***** |
| 2017-11-22 | 8541210000 | Transistors: - UNIVERSAL "BC846BLT1G" With NPN-junction, power dissipation 0.25 W, collector-emitter voltage 65V, collector current 100MA, for use in the various switches and amplifiers; - BIPOLAR "BC856B, 215" C P | ON SEMICONDUCTORS | *** | 2.1 | 317,7 | ST PETERSBURG | ***** | ***** |