| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-02 | 8541290000 | Semiconductor field-effect transistors are designed for use in power amplifiers TELECOMMUNICATIONS SECTORS / NOT SCRAP, WASTE NOT / NOT WAR, NOT DUAL-USE / NO for equipment operating in explosive atmospheres / SEMICONDUCTOR | *** | JAPAN | 4.84 | 74625,41 | *** | ***** | ***** |
| 2017-09-10 | 8541290000 | Semiconductor field-effect transistors are designed for use in power amplifiers telecommunications industry / NOT SCRAP, WASTE NOT, NOT MILITARY OR DUAL-USE NOT for equipment operating in explosive atmospheres / semiconductor | *** | JAPAN | 11.86 | 222812,68 | *** | ***** | ***** |
| 2017-09-21 | 8541290000 | Power FET SMD BASED gallium arsenide are intended for use in electronics PARTICULARLY IN bandpass amplifier, devices Radiocommunications - NOT A WASTE ELECTRICAL OR CROWBAR: VOLTAGE | *** | JAPAN | 0.09 | 1221,74 | *** | ***** | ***** |
| 2017-09-27 | 8541290000 | TRANSISTOR GaAs in metal-ceramic packages, internally coherent microwave power amplifiers. Designed to fit standard TELECOMMUNICATIONS use in the high frequency range. NOT AN ELECTRICAL CROWBAR. PACKED IN: OCHO | *** | JAPAN | 3.03 | 19460,34 | *** | ***** | ***** |
| 2017-11-02 | 8541290000 | Semiconductor FET power dissipation 31.2VT, VOLTAGE 15V, to the power amplifier TELECOMMUNICATIONS INDUSTRY N / FLM1213-6F - 2 pcs / JOM NOT NOT WASTE / NOT MILITARY NOT DOUBLE PURPOSE / NOT TO EQUIPMENT. | SUMITOMO | JAPAN | 0.21 | 432,9 | YAMANASHI | ***** | ***** |
| 2017-11-09 | 8541290000 | Semiconductor transistor, power dissipation 62VT, the DC 50 V, ARTICLE SGN2729-250H-R - 238SHT is approved for use in power amplifiers TELECOMMUNICATIONS INDUSTRY | SUMITOMO | JAPAN | 3.8 | 68254,28 | NAKAKOMA GUN | ***** | ***** |
| 2017-11-09 | 8541290000 | TRANSISTOR GaAs in metal-ceramic packages, internally coherent microwave power amplifiers. Designed to fit standard TELECOMMUNICATIONS use in the high frequency range. NOT AN ELECTRICAL CROWBAR. packed in | SUMITOMO | JAPAN | 0.241 | 4228,2 | TOKYO | ***** | ***** |
| 2017-11-19 | 8541290000 | Semiconductor transistor, power dissipation and 31,2VT 62VT is approved for use in power amplifiers TELECOMMUNICATIONS INDUSTRY | SUMITOMO | JAPAN | 1.44 | 21714,04 | YAMANASHI | ***** | ***** |
| 2017-11-30 | 8541290000 | TRANSISTOR GaAs in metal-ceramic packages, internally coherent microwave power amplifiers. Designed to fit standard TELECOMMUNICATIONS use in the high frequency range. NOT AN ELECTRICAL CROWBAR. PROVIDED | SUMITOMO | JAPAN | 0.053 | 383,38 | TOKYO | ***** | ***** |