| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-06 | 8541300009 | THYRISTOR 300A / 6500V-100 pieces. Housing height 26mm. APPLY energy converters, and other DC and AC electrical systems of various power. DO NOT CONTAIN COMPONENTS MANUFACTURED FROM SVERHPROVODYASCHIHMATERIALOV. | *** | CHINA | 35.5 | 7320 | *** | ***** | ***** |
| 2017-09-08 | 8541290000 | Transistors, phototransistor NOT BLOCK transistors soldered together (NOT phototransistor) for the VLT frequency converters, powerful. DANFOSS A / S DANFOSS IGBT 130B1884 IGBT 3 | *** | CHINA | 0.6 | 220,74 | *** | ***** | ***** |
| 2017-09-08 | 8541290000 | POWER TRANSISTOR IGBT, 1200, 345/600 A, parts to the inverter TYPE ALTIVAR 71, Cat. Cards. CDF. POWER TRANSISTOR IGBT, 1200, 345/600 A, parts to the frequency converter 71 ALTIVAR TYPE REGISTRATION NUMBER IN REGISTRY 03051/0280 | *** | CHINA | 1.27 | 291,02 | *** | ***** | ***** |
| 2017-09-11 | 8541100009 | Diode: Zener diodes, 1 NOT POWER-DC converters PANASONIC CORPORATION PANASONIC PANASONIC PQVDRLZ20A NO 45 | *** | CHINA | 0.08 | 4,86 | *** | ***** | ***** |
| 2017-09-13 | 8541401000 | Light emitting diodes for the light, without converter Light emitting diodes for the light, without converter - LED module is built, are illuminating elements in the energy-saving lamps, power 13W, PROVIDED DL | *** | CHINA | 7.3 | 8,34 | *** | ***** | ***** |
| 2017-09-13 | 8541290000 | Field effect transistors STW34NM60N BASED MOSFETs. MAXIMUM drain-source voltage 600V. Power dissipation 250W. It used within a block of the BIP-01 AS PART voltage converter for cathodic protection "ENERGOMERA" PNKZ-PPC-M10 SERIES transistors in and | *** | CHINA | 1.21 | 401,4 | *** | ***** | ***** |
| 2017-09-14 | 8541290000 | Transistor modules. Transistor modules - based on IGBT-transistors. DESIGNED FOR HIGH SWITCHING POWER IN THE COMPOSITION drive electric engine and static converters. FOR USE IN inverters, circuit breaker and | *** | CHINA | 248.7 | 45700,44 | *** | ***** | ***** |
| 2017-09-15 | 8541300009 | Thyristors, Shockley diode, SCR (NO photosensitive devices): MODULE diode-thyristor to convert the AC-DC CONVERTERS FREQUENCY the VLT, 220A. 1600, DANFOSS POWER ELECTRONICS A / S DANFOSS SCR 130B2449 SCR 24 | *** | CHINA | 4.85 | 676,65 | *** | ***** | ***** |
| 2017-09-15 | 8541290000 | Transistor does not phototransistor MODULE transistor consisting of a transistor (2 pcs) (NOT phototransistor)) for switching the load current frequency converters VLT. , 1200, 300A, 75 kW power dissipation, DANFOSS POWER ELECTRONICS A / S DANFOSS | *** | CHINA | 0.43 | 114,84 | *** | ***** | ***** |
| 2017-09-17 | 8541100009 | DIODES, TYPE SEMICONDUCTOR - SILICON: Dual Schottky diodes common cathode, low dropout ON PN PEREHODE.PRIMENYAETSYA The PULSE power converter of high frequency, rectifiers In POSTOYANNYY.VID POLUPROVODNIKA- KREMNIEVYY.IS | *** | CHINA | 17.28 | 6574,08 | *** | ***** | ***** |