| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-07 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON; IGBT-Module SEMIKRON ELEKTRONIK GMBH & CO. KG SEMIKRON SKM100GB1 | *** | GERMANY | 59.14 | 10456,85 | *** | ***** | ***** |
| 2017-09-08 | 8541290000 | Semiconductors: FIELD MOPTRANZISTORY insulated gate with a maximum power dissipation 100BT, SERIES 2SK1317; INTENDED FOR USE IN DC-DC converter, in the driver engines, 2SK1317-E regulator; | *** | TAIWAN CHINA | 10 | 4305,7 | *** | ***** | ***** |
| 2017-09-08 | 8541290000 | Transistor does not phototransistor: Transistor MODULE FOR VACON FREQUENCY CONVERTERS, power dissipation 4 kW VACON OYJ (VACON PLC) VACON IGBT 181B0427 IGBT 2 | *** | FINLAND | 0.86 | 289,16 | *** | ***** | ***** |
| 2017-09-08 | 8541290000 | Transistors, phototransistor NOT BLOCK transistors soldered together (NOT phototransistor) for the VLT frequency converters, powerful. DANFOSS A / S DANFOSS IGBT 130B1884 IGBT 3 | *** | CHINA | 0.6 | 220,74 | *** | ***** | ***** |
| 2017-09-08 | 8541290000 | POWER TRANSISTOR IGBT, 1200, 345/600 A, parts to the inverter TYPE ALTIVAR 71, Cat. Cards. CDF. POWER TRANSISTOR IGBT, 1200, 345/600 A, parts to the frequency converter 71 ALTIVAR TYPE REGISTRATION NUMBER IN REGISTRY 03051/0280 | *** | CHINA | 1.27 | 291,02 | *** | ***** | ***** |
| 2017-09-12 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL dissipated power of 1 W, the voltage source-drain 30, the drain current of 30 A, HULL TYPE 8QFN, CLASSIFICATION CODE 3417831 is for use in switching power supply, CONVERTER | *** | THAILAND | 1.02 | 2439,27 | *** | ***** | ***** |
| 2017-09-13 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON; | FUJI ELECTRIC | *** | 89.35 | 18531,3 | WEITERSTADT | ***** | ***** |
| 2017-09-13 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON | FUJI ELECTRIC | *** | 329.3 | 131293,82 | WEITERSTADT | ***** | ***** |
| 2017-09-13 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON IGBT-Module FUJI ELECTRIC FUJI ELECTRIC 1MBI1500UE-330-E 4 FUJI E | *** | JAPAN | 329.3 | 131293,82 | *** | ***** | ***** |
| 2017-09-13 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON; IGBT-Module FUJI ELECTRIC FUJI ELECTRIC 2MBI1400VXB-170P-50-M 10 | *** | JAPAN | 89.35 | 18531,3 | *** | ***** | ***** |