| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-11-01 | 8541290000 | Field-effect transistors, power dissipation 32 W, a voltage source-drain 600, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption, | INFINEON TECHNOLOGIES, CHINA | *** | 0.004 | 4,32 | MOSCOW | ***** | ***** |
| 2017-11-01 | 8541290000 | Field-effect transistors, power dissipation of 100 W, a voltage source-drain 100 V, semiconductor - silicon is designed for logic circuits to control the parameters of their energy consumption, | INFINEON TECHNOLOGIES, GERMANY | *** | 0.4 | 1085,5 | MOSCOW | ***** | ***** |
| 2017-11-01 | 8541290000 | Field-effect transistors, power dissipation of 235 watts, the voltage source-drain 400, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption, | ON SEMICONDUCTOR, CHINA | *** | 0.225 | 103,55 | MOSCOW | ***** | ***** |
| 2017-11-02 | 8541210000 | Field-effect transistors, power dissipation of 700 MW, voltage -45 V Semiconductors - SILICON is designed for logic circuits to control the parameters of their energy consumption, | DIODES INC, CHINA | *** | 0.006 | 6,28 | MOSCOW | ***** | ***** |
| 2017-11-08 | 8541290000 | Field-effect transistors, power dissipation 158 VT, the voltage source-drain 75, semiconductor - silicon are designed for logic circuits to control the parameters of their energy consumption, 118 | NEXPERIA, PHILIPPINES | *** | 0.011 | 29,62 | MOSCOW | ***** | ***** |
| 2017-11-08 | 8541290000 | Field-effect transistors, power dissipation of 150 W, a voltage source-drain 1.2 KV, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption, | STMICROELECTRONICS, MALAYSIA | *** | 0.009 | 15,5 | MOSCOW | ***** | ***** |
| 2017-11-13 | 8541290000 | Field-effect transistors, power dissipation 55 W, a voltage source-drain 65, semiconductor - silicon are designed for logic circuits to control the parameters of their energy consumption, ART: | MACOM | *** | 0.016 | 121,26 | MOSCOW | ***** | ***** |
| 2017-11-13 | 8541290000 | Field-effect transistors, power dissipation 104 W, a voltage source-drain 800, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption, ART: | INFINEON TECHNOLOGIES | *** | 1.386 | 637,64 | MOSCOW | ***** | ***** |
| 2017-11-13 | 8541210000 | Field-effect transistors, power dissipation of 300 MW, 60 V, semiconductor - silicon are designed for logic circuits to control the parameters of their energy consumption, ART: | DIODES INC | *** | 0.0001 | 0,2 | MOSCOW | ***** | ***** |
| 2017-11-14 | 8541290000 | Field-effect transistors, power dissipation of 140 W, a voltage source-drain 100 V, semiconductor - silicon is designed for logic circuits to control the parameters of their energy consumption, | INFINEON TECHNOLOGIES, MALAYSIA | *** | 0.06 | 130,42 | MOSCOW | ***** | ***** |