DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541100009 | Rectifier diodes and Zener diodes used in the manufacture of transformers and power supplies, do NOT SCRAP ELECTRIC EQUIPMENT NOT TO OPERATE IN EXPLOSION. MEDIA NOT FOR RAILWAY TRANSPORT NOT FOR WHEELED VEHICLES, INDUSTRIAL DIOD straighten | *** | CHINA | 40.6 | 3522,3 | *** | ***** | ***** |
2017-09-07 | 8541290000 | Transistors, solid-state, power dissipation 1.25 W, LOMELEKTROOBOR. NOT FOR RAILWAY NOT RADIATION SYSTEM, NOT FOR MEDICAL USE, components for industrial assembly TECHNOLOGY "SAMSUNG" SEMICONDUCTOR TRANSISTOR, KRE | *** | CHINA | 23.63 | 4931 | *** | ***** | ***** |
2017-09-07 | 8541210000 | Transistors, solid-state, power dissipation of 350 MW, NOT SCRAP, NOT FOR RAIL TRANSPORT SYSTEM NO RADIATION, NO MEDICAL NAZNACHENICHYA, for the industrial assembly TECHNOLOGY "SAMSUNG" SEMICONDUCTOR TRANSISTOR, MMBT2907A, VOLTAGE 60V, cardinality | *** | CHINA | 2 | 350,91 | *** | ***** | ***** |
2017-09-08 | 8541290000 | Transistors, solid-state, power dissipation 1 W, NOT SCRAP, NOT FOR RAIL TRANSPORT SYSTEM NO RADIATION, NO MEDICAL NAZNACHENICHYA, for the industrial assembly EQUIPMENT "SAMSUNG" TRANSISTOR SEMICONDUCTOR, SILICON 1.25 BT FOR PROM | *** | CHINA | 12.92 | 6739,39 | *** | ***** | ***** |
2017-09-11 | 8541290000 | Transistors, solid-state, power dissipation 1W MORE, NOT SCRAP, NOT FOR RAIL TRANSPORT SYSTEM NO RADIATION, NO MEDICAL NAZNACHENICHYA, components for industrial assembly EQUIPMENT "SAMSUNG" TRANSISTOR SEMICONDUCTOR, SILICON 1.2 | *** | CHINA | 25.1 | 2977,86 | *** | ***** | ***** |
2017-09-12 | 8541210000 | Transistors SEMICONDUCTOR NOT SCRAP, NOT FOR RAIL TRANSPORT SYSTEM NO RADIATION, NO MEDICAL NAZNACHENICHYA, for the industrial assembly TVS "SAMSUNG" SEMICONDUCTOR TRANSISTOR, MMBT2907A, 60V VOLTAGE, POWER 350MVT, SIZE 2.9 * | *** | CHINA | 1.89 | 294,93 | *** | ***** | ***** |
2017-09-12 | 8541290000 | Transistors, solid-state, power dissipation 1 W, NOT SCRAP, NOT FOR RAIL TRANSPORT SYSTEM NO RADIATION, NO MEDICAL NAZNACHENICHYA, for the industrial assembly EQUIPMENT "SAMSUNG" TRANSISTOR SEMICONDUCTOR (bipolar), SILICON, the FC | *** | CHINA | 6.83 | 623,53 | *** | ***** | ***** |
2017-09-14 | 8541290000 | Transistors, solid-state, power dissipation 1 W, NOT SCRAP, NOT FOR RAIL TRANSPORT SYSTEM NO RADIATION, NO MEDICAL NAZNACHENICHYA, for the industrial assembly TVS "SAMSUNG" TRANSISTOR SEMICONDUCTOR, SILICON 1.25 BT, FOR | *** | CHINA | 13.98 | 14293,83 | *** | ***** | ***** |
2017-09-15 | 8541401000 | Laser diodes, not for military purposes, not for railway transport, not for explosive environments is not for self-application: fiber-optic laser diode, is a semiconductor laser diode wavelengths from 914-916 NM, OUTPUT POWER 110 W | *** | CHINA | 4.5 | 13625,49 | *** | ***** | ***** |
2017-09-17 | 8541401000 | Light emitting diodes, NOT SCRAP ELECTRIC NOT FOR RAILWAY NOT FOR MEDICAL USE, WITHOUT POWER SUPPLIES, EQUIPMENT FOR "SAMSUNG" E LED / MOB. Phone model SM-J120 TIANJIN SAMSUNG TELECOM TECHNOLOGY CO., LTD SAMSUNG GALAXY S | *** | CHINA | 0.03 | 5,27 | *** | ***** | ***** |