| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL dissipated power 100 W, the voltage source-drain 100 V, the drain current of 25 A, HULL TYPE TO-252-3, CLASSIFICATION CODE 3417831 is for use in switching power supply CONVERTING | *** | CHINA | 1.26 | 683,79 | *** | ***** | ***** |
| 2017-09-08 | 8541290000 | Transistor modules (IGBT module) consisting of 4 field-effect transistor encased in a single housing, is applied in an uninterruptible power supply for servo control, the power of 4 W: TYPE SEMICONDUCTOR - SILICON. INFINEON TECHNOLOGIES IN | *** | CHINA | 0.01 | 0,24 | *** | ***** | ***** |
| 2017-09-10 | 8541290000 | TRANSISTORS Power Dissipation 65 W 2 is packaged in a plastic coil: Applied in residential uninterruptible power supply PROTECTION OF RADIO, chained CONTROL ELEKTRODVIGATELYAMI.VID SEMICONDUCTOR - KREMNIEVYY.ISPOLZUETSYA for the pro | *** | CHINA | 3.8 | 667,04 | *** | ***** | ***** |
| 2017-09-11 | 8541290000 | SEMICONDUCTOR TRANSISTORS, power dissipation 32-375 BT imported as raw materials (materials) for assembling the electronic module (card), studio flash units, portable mains power supply, the device raising and lowering of flash bulbs, the MOSFET | *** | CHINA | 0.7 | 270,25 | *** | ***** | ***** |
| 2017-09-11 | 8541290000 | Transistors, phototransistor ALSO USED IN UNIVERSAL inverter servo drives and other controllers ENGINES TRANSISTOR DEVICES - INTELLECTUAL the IGBT power modules, solid state, for voltage up to 1200 V, 300 A POWER SUPPLY | *** | CHINA | 174 | 55439,2 | *** | ***** | ***** |
| 2017-09-12 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL, power dissipation, 3.1 Tu, the voltage source-drain 60, the drain current of 100 A, HULL TYPE 8VSON, CLASSIFICATION CODE 3417831 is for use in switching power supply, transformation | *** | CHINA | 0.01 | 33,56 | *** | ***** | ***** |
| 2017-09-18 | 8541290000 | SEMICONDUCTOR TRANSISTORS, power dissipation 32-375 BT imported as raw materials (materials) for assembling the electronic module (card), studio flash units, portable mains power supply, the device raising and lowering of flash bulbs, Transis | *** | CHINA | 17.4 | 6983,18 | *** | ***** | ***** |
| 2017-09-19 | 8541290000 | Transistor modules (IGBT module) consisting of 4 field-effect transistor encased in a single housing, is applied in an uninterruptible power supply for servo control, the power of 4 W: TYPE SEMICONDUCTOR - SILICON. INFINEON TECHNOLOGIES IN | *** | CHINA | 0.17 | 4,02 | *** | ***** | ***** |
| 2017-09-25 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL dissipated power 150 W, the voltage source-drain 80 V, the drain current of 90 A TYPE BODY TO-252, CODE OKP 3417831 is for use in switching power supply, transformation | *** | CHINA | 0.23 | 106,93 | *** | ***** | ***** |
| 2017-11-23 | 8541290000 | A field effect transistor is an electronic key in the switching power supply, inverter, in a control system of electric drive. 600V | TRADEMARK NO | CHINA | 9.14 | 2716,56 | NANGZHOU BINZHIANG CHINA | ***** | ***** |