DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR: UNI | *** | TAIWAN CHINA | 30.72 | 56860,8 | *** | ***** | ***** |
2017-09-01 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR: UNI | *** | TAIWAN CHINA | 33.28 | 61599,2 | *** | ***** | ***** |
2017-09-06 | 8542323900 | MEMORY ATP BT MEM SODIMM DDR2 2GB: textolite BOARD with active and passive elements to create a volatile memory for the current job in a labeler BIZERBA TYPE GLME, POWER SUPPLY +1.8 V. 250 MW. 2 GB ( | *** | GERMANY | 0.01 | 272,65 | *** | ***** | ***** |
2017-09-17 | 8542323900 | Integrated circuits, monolithic, digital, dynamic random access memory (DRAM) K4B1G1646G-BCH9, 1Gbit, 96 pin, 1.5V SUPPLY VOLTAGE, POWER 0.277VT, SIZE 13.3 * 7.5 * 1.1mm, TV MODELS FOR PROM.SBORKI LE46D550K1WXRU:: SAMSUNG ELECTRONICS CO ., LT | *** | KOREA REPUBLIC OF | 0.9 | 459,51 | *** | ***** | ***** |
2017-09-26 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR | MICRON | *** | 88.32 | 163474,8 | ST PETERSBURG | ***** | ***** |
2017-09-26 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR: UNI | *** | CHINA | 7.68 | 14215,2 | *** | ***** | ***** |
2017-09-26 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR: UNI | *** | CHINA | 88.32 | 163474,8 | *** | ***** | ***** |
2017-09-26 | 8542323900 | Integrated circuits, monolithic, digital, dynamic random access memory (DRAM) K4B2G0846F-BCMA, VOLUME 2Gbps, 78 pin, 1.5V POWER SUPPLY FOR PROM.SBORKI TV MODELS UE55M5500AUXRU, HAS FUNCTIONS encryption / cryptography PACKAGING (24 1105-0 | *** | KOREA REPUBLIC OF | 66.44 | 62306,09 | *** | ***** | ***** |