| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET N-CHANNEL dissipated power 100 W, the voltage source-drain 100 V, the drain current of 25 A, HULL TYPE TO-252-3, CLASSIFICATION CODE 3417831 is for use in switching power supply CONVERTING | *** | CHINA | 1.26 | 683,79 | *** | ***** | ***** |
| 2017-09-02 | 8541409000 | Photosensitive semiconductor modules for repair and maintenance equipment Company SONY: POWER BUTTON-SWITCH ASSEMBLY WITH CONTROL photosensors the paper mounted on the board 5V, for professional printers, SON | *** | CHINA | 0.2 | 66,3 | *** | ***** | ***** |
| 2017-09-05 | 8541210000 | UNIVERSAL BIPOLAR TRANSISTORS: CILOVYE N-channel field "BSS123NH6327XTSA1" C 0,36VT power dissipation. TYPE SEMICONDUCTOR - SILICON. Designed for use in low-power switch applications. : Transistors. INFINEON TECHNOLOGIES AG | *** | CHINA | 1.65 | 699,37 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | Power MOSFET "STD12NF06LT4" Series, STRIP FETT With 30W power dissipation, drain-source voltage 60V, gate-source voltage 16V, continuous leakage current of 12A intended for use in the device switching. TYPE SEMICONDUCTOR: MOS | *** | CHINA | 1.28 | 754,38 | *** | ***** | ***** |
| 2017-09-06 | 8541100009 | ELECTRONIC COMPONENTS FOR GENERAL USE FOR OWN PRODUCTION UNITS ELECTRONIC EQUIPMENT - DIODES TVS DIODE, VOLTAGE 15.3V, 600W POWER SWITCHING DIODE, VOLTAGE 75-100V, CURRENT 0.2A Zener diodes, voltage 5.1V, MOSCHNOS | *** | CHINA | 2.05 | 355,41 | *** | ***** | ***** |
| 2017-09-07 | 8541401000 | Light-emitting diodes for voltage 12V, different brands, WITHOUT POWER SUPPLY, power cords and switches, located on the tape from hardboard, which is wound on a plastic KATUSHKU.PREDNAZNACHENY for commuting: CIVIL DEVICES Cars | *** | CHINA | 55 | 15190 | *** | ***** | ***** |
| 2017-09-07 | 8541401000 | Light emitting diodes WHITE: MODEL SERIES LC040D "SPHWHAHDNK25YZT3D2"; DURIS E5 SERIES MODELS "GWJDSTS2.EM-H3H6-XX51-1" and "GWJDSTS2.EM-H2H5-XX37-1". TYPE SEMICONDUCTOR - gallium nitride. PSU, power cord and switch is not. : si | *** | CHINA | 6.31 | 3360,61 | *** | ***** | ***** |
| 2017-09-07 | 8541401000 | Light emitting diodes: SERIES OSLON SQUARE "GWCSSRM1.PM-MUNQ-40OSR5-1" and a series of OSLON SSL 80 "GHCS8PM1.24-4T2U-1." TYPE SEMICONDUCTOR - gallium nitride. PSU, power cord and switch is not. : LEDS ARE DESIGNED FOR A street | *** | CHINA | 7.01 | 8877,12 | *** | ***** | ***** |
| 2017-09-08 | 8541500000 | Other semiconductor devices: semiconductor sensor switches based on Hall effect, Operation: When the effects of external magnetic field on the sensor in the semiconductor material of sensor a transverse electric field POWER SUPPLY | *** | CHINA | 4.5 | 3631,69 | *** | ***** | ***** |
| 2017-09-10 | 8541290000 | TRANSISTORS Power Dissipation 1.65 BT is packaged in a plastic coil 2: APPLICATION: bipolar NPN transistors with low voltage saturation PBSS4021NX designed for use in switching circuits and load transfer, the device with battery | *** | CHINA | 0.12 | 597 | *** | ***** | ***** |