DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-27 | 8541100009 | Rectifier diode bridge GENERATOR FOR USE IN PASSENGER A / M GROSS WEIGHT with tray-67kg | BULSTART-SLIVEN | *** | 60 | 360 | MOSCOW | ***** | ***** |
2017-11-02 | 8541100009 | PULSED rectifier diodes SEMICONDUCTOR MATERIAL - SILICON VOLTAGE 1000, current 70 A, APPLIED INDUSTRIAL ELECTRONICS, | VISHAY SEMICONDUCTOR, VISHAY INTERTECHNOLOGY, NEXPERIA, TAIWAN SEMICONDUCTOR, CHINA | *** | 0.103 | 44,12 | MOSCOW | ***** | ***** |
2017-11-03 | 8504408200 | Rectifier modules (six-pulse rectifier diode-thyristor element basis), 530V-540V, 80A, 1600V (voltage class, parts to the inverter TYPE ALTIVAR 61, ALTIVAR 71, Cat. Cards. CDF. | SCHNEIDER ELECTRIC | FRANCE | 0.872 | 124,27 | MOSCOW | ***** | ***** |
2017-11-07 | 8541100009 | DIODES, VIEW INSTALLATION: SCREW MOUNT, VR - inverse voltage: 400 V, IF - forward current: 150 A, TYPE: FAST RECOVERY RECTIFIERS, VF - Forward voltage: 1.3 V, MAX CURRENT TRANSFER: 1.5 KA, minimum working temperature: - 55 C, the WORKING | VISHAY | CHINA | 36 | 9600 | MOSCOW | ***** | ***** |
2017-11-07 | 8541100009 | DIODES, VIEW INSTALLATION: SCREW MOUNT, VR - inverse voltage: 200 V, IF - forward current: 150 A, TYPE: FAST RECOVERY RECTIFIERS, VF - Forward voltage: 0.99 V, MAX CURRENT TRANSFER: 1.6 KA, minimum working temperature: - 55 C, the | VISHAY | CHINA | 18 | 4500 | MOSCOW | ***** | ***** |
2017-11-08 | 8541100009 | DIODES FOR RADIOELEKTROOBORUDOVANIYA power rectifier, SODERZH.DRAGMETALLOV less than 2% WITHOUT THE POSSIBILITY OF EXTRACTION, NOT SCRAP ELECTRIC, in the range, MARKING | "FOTON" | UZBEKISTAN | 46.95 | 39819,9 | MOSCOW | ***** | ***** |
2017-11-08 | 8541100009 | BRIDGE DIODE RECTIFIER (three-phase diode bridge), IS BUILT ELECTRONIC COMPONENT, SEMICONDUCTOR MATERIAL - SILICON maximum voltage 1600 V, current of 40 A, designed to convert AC | VISHAY SEMICONDUCTOR, ITALY | *** | 0.26 | 198,92 | MOSCOW | ***** | ***** |
2017-11-09 | 8541100009 | DIODES two-electrode semiconductor rectifier, for instrument. They have different conductivity as a function of the direction of the electric current. TYPE SEMICONDUCTOR -DVUOKIS GERMANY (GEO2) (10 pieces per 195 UPAK) (NOT SCRAP | VISHAY | *** | 1.1 | 44,75 | MOSCOW | ***** | ***** |
2017-11-13 | 8541100009 | DIODES power rectifier, Silicon diffusion, designed to work in rectifying devices EQUIPMENT, ARE NOT CROWBAR ELECTRICAL and electrical units, TYPE SEMICONDUCTOR SILICON TOTAL - 12531 pcs | "FOTON" | UZBEKISTAN | 52.01 | 25932,3 | MOSCOW | ***** | ***** |
2017-11-13 | 8541100009 | BRIDGE DIODE RECTIFIER (three-phase diode bridge), IS BUILT ELECTRONIC COMPONENT, SEMICONDUCTOR MATERIAL - SILICON, the maximum voltage of 600 V, current of 30 A, designed to convert AC | BOURNS, TAIWAN (CHINA) | *** | 0.019 | 25,37 | MOSCOW | ***** | ***** |