| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8541409000 | SEMICONDUCTOR SOLID photorelay (based photodiode) PCB. (NOT SCRAP ELECTRIC): VISHAY INTERTECHNOLOGY, INC. WITHOUT TRADEMARK B / N VO14642AABTR B / N 9 | *** | CHINA | 0.01 | 31,46 | *** | ***** | ***** |
| 2017-09-02 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensitive semiconductor devices, is a device consisting of a photoreceptor element, amplifying devices and the electromagnetic relay, the principle of Daisy | *** | CHINA | 0.68 | 17,94 | *** | ***** | ***** |
| 2017-09-11 | 8541401000 | LEDS. ASSESSMENT on the PCB TERMINALS relay protection cabinets used at power plants. LEDS, ART. FYL-3019NURPGW1A-CA - 15000 PCS. ROUND color LED 3 mm diameter, rigid leads THREE COLOR RED GLOW | *** | CHINA | 4.2 | 970,29 | *** | ***** | ***** |
| 2017-09-15 | 8541409000 | SEMICONDUCTOR DEVICES Photosensitive. (NOT SCRAP ELECTRIC) solid state photo-relay PCB (made on the basis of the phototransistor): SOLID Photo- PCB (made on the basis of the phototransistor) IXYS IN | *** | CHINA | 0.02 | 23,86 | *** | ***** | ***** |
| 2017-09-17 | 8541210000 | TRANSISTORS Power Dissipation 0.325 BT TYPE SEMICONDUCTOR SILICON-: MOSFET N-CHANNEL WITH NX7002AK are intended for use in the control circuit RELAY, SWITCHING, HIGH AS A KEY FOR SWITCHING LOAD IN THE LOWER FL | *** | CHINA | 0.25 | 313,56 | *** | ***** | ***** |
| 2017-09-17 | 8541210000 | TRANSISTORS Power Dissipation 0.325 BT TYPE SEMICONDUCTOR SILICON-: MOSFET N-CHANNEL WITH NX7002AK are intended for use in the control circuit RELAY, SWITCHING, HIGH AS A KEY FOR SWITCHING LOAD IN THE LOWER FL | *** | CHINA | 0.19 | 235,17 | *** | ***** | ***** |
| 2017-09-21 | 8541409000 | SEMICONDUCTOR DEVICES Photosensitive. (NOT SCRAP ELECTRIC) solid state photo-relay PCB (made on the basis of the phototransistor): Transistor Output Optocouplers (phototransistor) VISHAY SEMICONDUCTORS WITHOUT A TRADEMARK B | *** | CHINA | 0.2 | 333,57 | *** | ***** | ***** |
| 2017-09-21 | 8541409000 | SEMICONDUCTOR DEVICES Photosensitive. (NOT SCRAP ELECTRIC) solid state photo-relay PCB (made on the basis of the phototransistor): SOLID Photo- PCB (made on the basis of the phototransistor) IXYS IN | *** | CHINA | 0.03 | 36,71 | *** | ***** | ***** |
| 2017-09-21 | 8541409000 | SEMICONDUCTOR DEVICES Photosensitive. (NO ELECTRICAL SCRAP): SOLID photorelay PCB (MADE ON THE BASIS phototransistor) TOSHIBA WITHOUT TRADEMARK B / N TLP172AM (TPR, E B / N 100 | *** | CHINA | 0.06 | 77,04 | *** | ***** | ***** |
| 2017-09-24 | 8541290000 | TRANSISTORS Power Dissipation 1.2 W: APPLY TO RELAY POVOROTA.VID POLUPROVODNIKA- SILICON. TYPE OF TRANSITION - N-CHANNEL MOSFET .MOSCHNOST PTOT DISPERSION OVER 1 W.RABOCHEE VOLTAGE TO CURRENT 100V.MAKSIMALNY 80 A. USED FOR THE PRODUCTION | *** | CHINA | 0.83 | 1030 | *** | ***** | ***** |