DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-02 | 8541210000 | Transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE FET power dissipation 0.83VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistor power dissipation | *** | SINGAPORE | 2 | 277,28 | *** | ***** | ***** |
2017-09-11 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.25W to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistors MOSCHNOS | *** | CHINA | 1 | 127,99 | *** | ***** | ***** |
2017-09-11 | 8541210000 | Transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE Bipolar Transistor Power Dissipation 0.5W to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased TO92 FET power dissipation | *** | CHINA | 2 | 240,56 | *** | ***** | ***** |
2017-09-11 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.3VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistors power | *** | CHINA | 2 | 284,19 | *** | ***** | ***** |
2017-09-18 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.83VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased TO92 bipolar transistors power | *** | MALAYSIA | 2 | 247,64 | *** | ***** | ***** |
2017-09-23 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.35VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistors MOSCHNOS | *** | PHILIPPINES | 3 | 327,8 | *** | ***** | ***** |
2017-09-23 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.31VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 NEXPERIA BV NEXPERIA BV BC8 | *** | PHILIPPINES | 1 | 133,71 | *** | ***** | ***** |
2017-09-23 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.31VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistors MOSCHNOS | *** | PHILIPPINES | 3 | 348,65 | *** | ***** | ***** |
2017-09-23 | 8541210000 | Transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.2VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 FET power dissipation | *** | PHILIPPINES | 3 | 390,7 | *** | ***** | ***** |
2017-11-02 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE | NEXPERIA BV | *** | 1 | 158,93 | MOSCOW | ***** | ***** |