DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-01 | 8541290000 | Field-effect transistors, power dissipation 32 W, a voltage source-drain 600, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption, | INFINEON TECHNOLOGIES, CHINA | *** | 0.004 | 4,32 | MOSCOW | ***** | ***** |
2017-11-01 | 8541100009 | TVS-diode (suppressor) SEMICONDUCTOR MATERIAL - SILICON VOLTAGE 87.1 V Power Dissipation 5 KW, is designed to limit the voltage to a logic circuit | LITTELFUSE, CHINA | *** | 0.105 | 25,4 | MOSCOW | ***** | ***** |
2017-11-01 | 8541290000 | Field-effect transistors, power dissipation of 100 W, a voltage source-drain 100 V, semiconductor - silicon is designed for logic circuits to control the parameters of their energy consumption, | INFINEON TECHNOLOGIES, GERMANY | *** | 0.4 | 1085,5 | MOSCOW | ***** | ***** |
2017-11-01 | 8541600000 | A quartz oscillator is a crystal PEZOELEKRICHESKIE gathered in SMD-surface mount package, is designed to produce VIBRATIONS fixed frequency with a high temperature and time stability, WORKING | SILICON LABORATORIES, AKER, TAIWAN (CHINA) | *** | 0.432 | 1012,66 | MOSCOW | ***** | ***** |
2017-11-01 | 8541210000 | Bipolar transistors, power dissipation of 150 MW, voltage 45 V, semiconductor - silicon is intended for the generation and amplification of electrical oscillations, | DIODES, CHINA | *** | 0.002 | 64,71 | MOSCOW | ***** | ***** |
2017-11-01 | 8541290000 | Bipolar transistors, power dissipation 85 W, 100 V, semiconductor - silicon is intended for the generation and amplification of electrical oscillations, | ON SEMICONDUCTOR, PHILIPPINES | *** | 0.01 | 5,37 | MOSCOW | ***** | ***** |
2017-11-01 | 8541290000 | Field-effect transistors, power dissipation of 235 watts, the voltage source-drain 400, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption, | ON SEMICONDUCTOR, CHINA | *** | 0.225 | 103,55 | MOSCOW | ***** | ***** |
2017-11-01 | 8541409000 | Photodiodes SEMICONDUCTOR MATERIAL - SILICON, voltage 50 V, current 750 PA, long waves 800-1700 NM, is designed to convert hitting on its photosensitivity region of the light into electric charges are applied INDUSTRIAL | LUNA OPTOELECTRONICS, CHINA | *** | 0.01 | 89,25 | MOSCOW | ***** | ***** |
2017-11-01 | 8541100009 | Schottky diodes, SEMICONDUCTOR MATERIAL - SILICON VOLTAGE 40 V, current 0.2 A, are used in logic circuits to improve their performance, SCOPE - INDUSTRIAL ELECTRONICS, | NEXPERIA, INFINEON TECHNOLOGIES, DIODES, CHINA | *** | 0.012 | 1300,37 | MOSCOW | ***** | ***** |
2017-11-02 | 8541100009 | PULSED rectifier diodes SEMICONDUCTOR MATERIAL - SILICON VOLTAGE 1000, current 70 A, APPLIED INDUSTRIAL ELECTRONICS, | VISHAY SEMICONDUCTOR, VISHAY INTERTECHNOLOGY, NEXPERIA, TAIWAN SEMICONDUCTOR, CHINA | *** | 0.103 | 44,12 | MOSCOW | ***** | ***** |