DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-01 | 8541210000 | Transistors, designed for use in electrotechnical assemblies GENERAL PURPOSE TYPE SEMICONDUCTOR, SILICON | ABSENT | *** | 8E-05 | 3,59 | ST PETERSBURG | ***** | ***** |
2017-11-03 | 8541210000 | TRANSISTORS SILICON C NPN-TRANSITION: "BC817-40W, 115" C dissipation of 250 milliwatts. TYPE SEMICONDUCTOR - SILICON. | NEXPERIA | *** | 0.24 | 48 | ST PETERSBURG | ***** | ***** |
2017-11-03 | 8541210000 | Silicon Transistors C NPN-TRANSITION: "BC847BTT1G" With power dissipation 150MVT; "BC847BDW1T1G" With power dissipation 380MVT; "BC857BTT1G" and "BC857BDW1T1G" With the power dissipation of 250 mW; "MUN5111DW1T1G" Since power dissipation of 310 MW; "MUN52 | ON SEMICONDUCTOR | *** | 1.34 | 371,1 | ST PETERSBURG | ***** | ***** |
2017-11-06 | 8541210000 | TRANSISTORS Power Dissipation 0.25 W TYPE SEMICONDUCTOR, SILICON | NEXPERIA | *** | 0.42 | 332,4 | ST PETERSBURG | ***** | ***** |
2017-11-06 | 8541210000 | TRANSISTORS Power Dissipation 0.25 W TYPE SEMICONDUCTOR, SILICON | NEXPERIA | *** | 1.26 | 997,2 | ST PETERSBURG | ***** | ***** |
2017-11-06 | 8541210000 | TRANSISTORS Power Dissipation 0.25 W TYPE SEMICONDUCTOR, SILICON | NXP | *** | 0.096 | 78,24 | ST PETERSBURG | ***** | ***** |
2017-11-06 | 8541210000 | TRANSISTORS Power Dissipation 0.25 W TYPE SEMICONDUCTOR, SILICON | NEXPERIA | *** | 0.192 | 162,72 | ST PETERSBURG | ***** | ***** |
2017-11-06 | 8541210000 | TRANSISTORS Power Dissipation 0.25 W TYPE SEMICONDUCTOR, SILICON | NXP | *** | 3.654 | 2980,62 | ST PETERSBURG | ***** | ***** |
2017-11-06 | 8541210000 | TRANSISTORS Power Dissipation 0.25 W TYPE SEMICONDUCTOR, SILICON | NXP | *** | 0.024 | 17,91 | ST PETERSBURG | ***** | ***** |
2017-11-06 | 8541210000 | TRANSISTORS Power Dissipation 0.25 W TYPE SEMICONDUCTOR, SILICON | NEXPERIA | *** | 0.12 | 263,25 | ST PETERSBURG | ***** | ***** |