DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR dissipation of 34W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in plastic bags (scattering of small) INFINEON TECHNOLOGIES AG INFINE | *** | JAPAN | 0.04 | 25,25 | *** | ***** | ***** |
2017-09-01 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation of 110 W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TRANSISTOR SEMICONDUCTOR POWER RA | *** | JAPAN | 2.83 | 804,6 | *** | ***** | ***** |
2017-09-04 | 8541290000 | SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: N-channel MOSFET transistors TYPE SEMICONDUCTOR - silicon, the SRT-VOLTAGE SOURCE 65V output power of 60W, the working speed of 1GHz, power dissipation 79VT, drain current 7A. STMICROELECTRONICS NV | *** | JAPAN | 0.03 | 192,56 | *** | ***** | ***** |
2017-09-10 | 8541290000 | Transistors, phototransistor EXCEPT: SEMICONDUCTOR TRANSISTOR, for PCB mounting, POLUPROVODNIKA- TYPE SILICON, power dissipation 300W IXYS IXYS IXYS NO IXTA26P20P 200 | *** | JAPAN | 0.5 | 309,76 | *** | ***** | ***** |
2017-09-10 | 8541290000 | SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: MOSFET-TRANSISTORS, N-CHANNEL USED IN INSTRUMENT for surface mounting. TYPE SEMICONDUCTOR - SILICON, voltage 650 V, power dissipation of 660 Tues IXYS IXYS IXYS NO I | *** | JAPAN | 8.21 | 650,92 | *** | ***** | ***** |
2017-09-12 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 2,1VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel INFINEON TECHNOLOGIES AG INFINEON AUIRFL0 | *** | JAPAN | 0 | 994,27 | *** | ***** | ***** |
2017-09-13 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON IGBT-Module FUJI ELECTRIC FUJI ELECTRIC 1MBI1500UE-330-E 4 FUJI E | *** | JAPAN | 329.3 | 131293,82 | *** | ***** | ***** |
2017-09-13 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON; IGBT-Module FUJI ELECTRIC FUJI ELECTRIC 2MBI1400VXB-170P-50-M 10 | *** | JAPAN | 89.35 | 18531,3 | *** | ***** | ***** |
2017-09-14 | 8541290000 | Transistors, phototransistor EXCEPT: SILICON Bipolar transistors, power dissipation of 2.0 W is used as an element in SMD mounting on circuit boards PRINTED FOR RADIO packaged in blister packs TAPE IN 1000 item in plastic cassette 1-DRAWER TRANZIS | *** | JAPAN | 13.97 | 22859,02 | *** | ***** | ***** |
2017-09-14 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 1,6VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TRANSISTOR SEMICONDUCTOR POWER PAC | *** | JAPAN | 1.34 | 542,14 | *** | ***** | ***** |