DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) Electronic integrated circuits | *** | CHINA | 0.74 | 2362,6 | *** | ***** | ***** |
2017-09-01 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) Electronic integrated circuits | *** | CHINA | 0.44 | 187,39 | *** | ***** | ***** |
2017-09-08 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....) Of the electronic integrals | *** | THAILAND | 0.38 | 400,58 | *** | ***** | ***** |
2017-09-08 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....) Of the electronic integrals | *** | THAILAND | 0.18 | 991,03 | *** | ***** | ***** |
2017-09-08 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....) Of the electronic integrals | *** | THAILAND | 1.16 | 2511,25 | *** | ***** | ***** |
2017-09-18 | 8542326100 | The memory device FLASH EEPROM MEMORY TO 512 MBIT (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE WITHOUT JOM elect AND Electrot nodes, not for secret and recording of information, without the module TPM.....) MICROCIRCUIT AM29F080B-90EF; TO | *** | MALAYSIA | 0.07 | 44,47 | *** | ***** | ***** |
2017-09-22 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) Electronic integrated circuits | *** | MOROCCO | 1.26 | 1204,03 | *** | ***** | ***** |
2017-11-11 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): | AMD | *** | 0.02 | 16,23 | HONG KONG | ***** | ***** |
2017-11-15 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): | MICROCHIP TECHNOLOGY INC. | *** | 0.163 | 276,41 | HONG KONG | ***** | ***** |
2017-11-15 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): | MICROCHIP TECHNOLOGY INC. | *** | 0.009 | 3,73 | HONG KONG | ***** | ***** |