DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-02 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 128 GB is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0.02 | 39,6 | *** | ***** | ***** |
2017-09-02 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 32 GB is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0.09 | 90 | *** | ***** | ***** |
2017-09-02 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 16 GB is approved for use in telecommunications equipment. supply voltage | *** | UNITED STATES | 0.06 | 32,5 | *** | ***** | ***** |
2017-09-02 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 32 GB is approved for use in telecommunications equipment. supply voltage | *** | MALAYSIA | 0.04 | 175,83 | *** | ***** | ***** |
2017-09-07 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 8 GB is approved for use in telecommunications equipment. Supply voltage | *** | TAIWAN CHINA | 0.01 | 5 | *** | ***** | ***** |
2017-09-13 | 8542326900 | FLASH EPROM ES with a storage capacity greater than 512 MBIT used as a kit in the production of lighting and telecommunication equipment, DO NOT SCRAP elect., Not for explosive. MEDIA, GRAZHDANSK.NAZNACH. NOT FOR MICROCHIP INTEG | *** | JAPAN | 0.98 | 982,15 | *** | ***** | ***** |
2017-09-14 | 8542326900 | Integrated circuits, monolithic, represents FLASH MEMORY is approved for use in telecommunications equipment. NOT possess the function of encryption (cryptographic) facilities. NOT AN ELECTRICAL CROWBAR. OBSCHEPRO: TIME | *** | PHILIPPINES | 0 | 9,35 | *** | ***** | ***** |
2017-09-14 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 1 GB is approved for use in telecommunications equipment. Supply voltage | *** | TAIWAN CHINA | 0 | 135 | *** | ***** | ***** |
2017-09-14 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 16 GB is approved for use in telecommunications equipment. supply voltage | *** | TAIWAN CHINA | 0.01 | 5,5 | *** | ***** | ***** |
2017-09-21 | 8542326900 | Electronic integrated circuits, P / N KLMBG4GEND-B031001, storage devices, flash-EPROM ES with a storage capacity of 32 GB, the operating temperature -25 ° C to +85 ° C, INTENDED FOR TELECOMMUNICATION EQUIPMENT, without the contents encryption function (: CRYPTO | *** | KOREA REPUBLIC OF | 3.2 | 28512 | *** | ***** | ***** |