DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541290000 | MOS transistors for use in telecommunications equipment ,. CROWBAR ARE NOT ELECTRIC. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on 100 BREAKDOWN VOLTAGE | *** | TAIWAN CHINA | 0.2 | 1821,32 | *** | ***** | ***** |
2017-09-01 | 8541290000 | MOS transistors for use in telecommunications equipment ,. CROWBAR ARE NOT ELECTRIC. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 30 | *** | TAIWAN CHINA | 0 | 3,09 | *** | ***** | ***** |
2017-09-01 | 8541290000 | Bipolar transistors power dissipation 313 BT MODEL SKW25N120, ARTICLE SKW25N120FKSA1 - 43 PCS. NOT SCRAP ELECTRIC, DO NOT WASTE. DATA products are used in telecommunications equipment. CUSTOM PACKAGING - TUBA. : "INFINEON" INFI | *** | JAPAN | 0.02 | 377,97 | *** | ***** | ***** |
2017-09-02 | 8541290000 | Semiconductor field-effect transistors are designed for use in power amplifiers TELECOMMUNICATIONS SECTORS / NOT SCRAP, WASTE NOT / NOT WAR, NOT DUAL-USE / NO for equipment operating in explosive atmospheres / SEMICONDUCTOR | *** | JAPAN | 4.84 | 74625,41 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Transistor: IRF7506TRPBF TRANSISTOR MANUFACTURING COMPANY INTERNATIONAL RECTIFIER IS MOSFET. Designed for use in telecommunications equipment, in the means of communication to reduce the interference level and reliability Transistor | *** | UNITED STATES | 0.03 | 299 | *** | ***** | ***** |
2017-09-05 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on a printed circuit board, not creating disturbing electromagnetic field: a MOS transistor for use in telecommunications equipment, is designed for the breakdown voltage of 6 | *** | CHINA | 3.17 | 34479,98 | *** | ***** | ***** |
2017-09-06 | 8541290000 | TRANSISTOR FOR A TELECOMMUNICATIONS EQUIPMENT N-channel MOS transistors, CHANNEL, drain-source voltage of 30 V, the drain current of 9.5 A, power dissipation 2.8W CHANNEL operating temperature - 55 C + 175 C, BODY TO-252- 3 FAIRCHILD FAI | *** | CHINA | 0.2 | 277,66 | *** | ***** | ***** |
2017-09-06 | 8541290000 | TRANSISTOR FOR A TELECOMMUNICATIONS EQUIPMENT N-channel MOS transistors, CHANNEL, drain-source voltage of 30 V, the drain current of 8.4 A, power dissipation CHANNEL 75 BT OPERATING TEMPERATURE - 55 C + 150 C, BODY DPAK ON SEMICONDUCTORS | *** | CHINA | 0.2 | 1112,26 | *** | ***** | ***** |
2017-09-06 | 8541290000 | TRANSISTOR DESIGNED FOR USE IN TELECOMMUNICATIONS EQUIPMENT N-channel MOS KEY power dissipation 2.5W, the maximum drain-source voltage of 20 V, the maximum drain current is 16A, temperature range -40 + 85C, SOIC-8 BODY FOR SURFACE | *** | CHINA | 0.09 | 157,63 | *** | ***** | ***** |
2017-09-10 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on a printed circuit board, not creating disturbing electromagnetic field: bipolar transistors for use in telecommunications equipment, rated at K | *** | TAIWAN CHINA | 0.04 | 121,42 | *** | ***** | ***** |