Transistor Import Data of Russia

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Lookup Russia trade data of Transistor imports from Slovakia. Our Transistor market research report on imports includes importers and exporters name, quantity, value, market size and price of transistor imports by Russia from Slovakia with more shipment details.

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DATE HS_CODE Product Description TrademarkCountry Net Weight Statistical Cost Place Shipper NameConsignee Name
2017-09-088541290000Other transistors, phototransistors EXCEPT: MOS TRANSISTOR ROHS: respective housing: SMD PACKAGING / UNIT: SOT-23-3 Number of channels: 1 Transistor Polarity: N VDS - breakdown voltage of the drain-source 30 V ID - CONSTANT CURRENT LEAKS: A 5 RDS ON - SOPROT***SLOVAKIA0.97559,09*************
2017-09-088541210000TRANSISTORS EXCEPT phototransistor dissipation of less than 1 W: MOS TRANSISTOR NUMBER CHANNEL 1 CHANNEL TRANSISTOR POLARITY: N-CHANNEL VDS - breakdown voltage of the drain-source: MOS TRANSISTOR NUMBER OF CHANNELS: 1 Transistor Polarity: N VDS - H***SLOVAKIA185269,72*************
2017-09-088541290000Other transistors EXCEPT phototransistor: MOSFET VDS - drain-source voltage: 75 V PD - Power Dissipation: 330 W Number of channels: 1 Transistor Polarity: N ID - CONSTANT CURRENT LEAKS: 140 A RDS ON - Resistance Drain-7 mOHMS VG***SLOVAKIA13.44846,21*************
2017-09-088541290000Other transistors, phototransistors EXCEPT: insulated-gate bipolar transistor (IGBT) collector-emitter voltage (VCEO), max .: 600 V VOLTAGE SATURATION collector-emitter: 2.7 V MAXIMUM gate-emitter voltage: +/- 20 V CONTINUOUS***SLOVAKIA0.75343,48*************
2017-09-088541290000Other transistors, phototransistors EXCEPT: TRANSISTOR MOS TRANSISTOR POLARITY: N VDS - breakdown voltage of the drain-source 30 V ID - CONSTANT CURRENT LEAKS: MOS TRANSISTOR NUMBER OF CHANNELS: 1 Transistor Polarity: N VDS - breakdown voltage of the drain-source 4***SLOVAKIA21.688757,64*************
2017-09-218541290000TRANSISTORS: IGBT transistors CONNECTION - three independent half-bridge. It is designed to build inverter. RATED CURRENT each transistor 683A, rated voltage of 1200V. IGBT has three external pins: emitter, collector: SHUTTER***SLOVAKIA20641852,01*************
2017-09-278541290000Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON; IGBT-Module SEMIKRON ELEKTRONIK GMBH & CO. KG SEMIKRON SKM145GB1***SLOVAKIA29.224313,56*************


Our transistor import data of Russia and market research report covers market priceof transistor and market share of Russian companies. This helps you to do market analysis on the basis of price, company, etc. efficiently and gain knowledge on market size of transistor in Russia. Few shipment records with a small number of important columns from Russia import data of transistor are given above. Other hidden fields such as Russian Importer Name with Address, Foreign Importer Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of transistor. To view more shipment records of transistor import data of Russia, you can set a filter by Country Name, HS Code and Place.

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