DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-04 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,25VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel NEXPERIA BV NEXPERIA PDTA114ET.215 PDT | *** | MEXICO | 0.2 | 208,58 | *** | ***** | ***** |
2017-09-06 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,3VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon). (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TRANSISTOR SEMICONDUCTOR POWER RA | *** | MEXICO | 0.85 | 317,44 | *** | ***** | ***** |
2017-09-10 | 8541210000 | Bipolar transistors, for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Rated at CALL | *** | MEXICO | 0 | 4,73 | *** | ***** | ***** |
2017-09-10 | 8541210000 | Bipolar transistors, for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Rated at CALL | *** | MEXICO | 0.02 | 7,83 | *** | ***** | ***** |
2017-09-10 | 8541210000 | Bipolar transistors, for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Rated at CALL | *** | MEXICO | 0.01 | 21,76 | *** | ***** | ***** |
2017-09-12 | 8541210000 | Bipolar transistors, power dissipation of 150 MW, voltage 50 V, semiconductor - silicon is intended for the generation and amplification of electrical oscillations,: TOSHIBA TOSHIBA, PHILIPPINES RN1107MFV 1000 | *** | MEXICO | 0.6 | 93,66 | *** | ***** | ***** |
2017-09-12 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,36VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TRANSISTOR SEMICONDUCTOR POWER RA | *** | MEXICO | 3.35 | 1533,9 | *** | ***** | ***** |
2017-09-12 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,33VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TRANSISTOR SEMICONDUCTOR POWER RA | *** | MEXICO | 1.99 | 988,5 | *** | ***** | ***** |
2017-09-12 | 8541210000 | TRANSISTOR MODEL "ATF-38143-BLKG" - 100 pcs. PRODUCT made in the case SOT-343. 0.58VT total dissipation (Watts) and drain-source voltage of 4.5 V. information on the type SEMICONDUCTOR absence. : AVAGO TECHNOLOGIES AVAGO 0 | *** | MEXICO | 0.05 | 64,84 | *** | ***** | ***** |
2017-09-13 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,64VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel NEXPERIA BV NEXPERIA BCP56.115 BCP56.1 | *** | MEXICO | 6.3 | 1224,53 | *** | ***** | ***** |