DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-04 | 8541290000 | SEMICONDUCTOR DEVICES, TYPE SEMICONDUCTOR - silicon, used in the manufacture electronic modules and dresses for various devices: transistor modules, power dissipation 30W: MITSUBISHI ELECTRIC MITSUBISHI MITSUBISHI RA30H4452M-101 is absent | *** | GERMANY | 1.18 | 667,59 | *** | ***** | ***** |
2017-09-04 | 8541290000 | SEMICONDUCTOR DEVICES, TYPE SEMICONDUCTOR - silicon, used in the manufacture electronic modules and dresses for various devices: transistors, power dissipation 125 W: STMICROELECTRONICS STMICROELECTRONICS STMICROELECTRONICS BU931T absent | *** | GERMANY | 0.08 | 380,99 | *** | ***** | ***** |
2017-09-04 | 8541290000 | TRANSISTOR FOR SEMICONDUCTOR PCB mounting. 1. The number of channels drain-source voltage of 30 V .: gate-source voltage of 2.2 V. 39 CONTINUOUS LEAKAGE CURRENT AMP. Resistance Drain-10 IOM. Power dissipation 28 VT.DIAPAZON THOSE WORKERS | *** | GERMANY | 0.08 | 1,95 | *** | ***** | ***** |
2017-09-05 | 8541290000 | TRANSISTORS FOR SEMICONDUCTOR POWER BOOST, generating and converting electrical signals into INSTRUMENT: TYPE SEMICONDUCTOR - silicon oxide (SIO2), power dissipation 125W SEMICONDUCTOR TRANSISTORS FOR GAIN, AND GENERATION | *** | GERMANY | 2.7 | 72 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Transistors for PCB mounting, field P-channel, power dissipation 2 W: transistor for PCB mounting, field P-channel, power dissipation 2 W INTERNATIONAL RECTIFIER IR IRF5806TRPBF NO 100 | *** | GERMANY | 0.01 | 0,76 | *** | ***** | ***** |
2017-09-07 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON; IGBT-Module SEMIKRON ELEKTRONIK GMBH & CO. KG SEMIKRON SKM100GB1 | *** | GERMANY | 59.14 | 10456,85 | *** | ***** | ***** |
2017-09-08 | 8541290000 | Transistor module for the power supply PROCESS EQUIPMENT .: POWER transistor modules, AC 1200V, 260A SIEMENS AG SIEMENS A5E31111556 3 | *** | GERMANY | 0.9 | 382,3 | *** | ***** | ***** |
2017-09-11 | 8541290000 | Transistors for PCB mounting, field N-channel, power dissipation 1.25VT: transistors for PCB mounting, field N-channel, power dissipation 1.25VT INFINEON TECHNOLOGIES INFINEON IRLML2502TRPBF NO 20 | *** | GERMANY | 0.02 | 1,44 | *** | ***** | ***** |
2017-09-11 | 8541290000 | Transistors for PCB mounting, field N-channel, power dissipation 53VT: transistors for PCB mounting, field N-channel, power dissipation 53VT ON SEMICONDUCTOR ON SEMICONDUCTOR FQP20N06 NO 6 | *** | GERMANY | 0.01 | 0,44 | *** | ***** | ***** |
2017-09-11 | 8541290000 | SEMICONDUCTOR TRANSISTORS for use in the installation of electrical circuits, IS THE DEMOLITION EL / EQUIPMENT - MOSFETs, insulated gate, TYPE SEMICONDUCTOR - of N-CHANNEL, power 125 W, 10 V, RAB.TEMP. -55 - +150: GRAD | *** | GERMANY | 0.04 | 1,93 | *** | ***** | ***** |