DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-11 | 8541290000 | COMPONENTS FOR MEDICAL X-ray equipment: semiconductor products IGBT modules (the article is an insulated-gate bipolar transistor - TROHELEKTRODNY power semiconductor devices that combine two transistors IN ONE IN | *** | ITALY | 1.2 | 393,59 | *** | ***** | ***** |
2017-09-12 | 8541290000 | Semiconductor devices - Module IGBT. IS A HIGH-SPEED DUAL POWER module based on insulated-gate bipolar transistor MANAGEMENT UV lamp FLEKSOPRINTERA. MAX. Switched current - 150 A MAKS.NAPRYAZHENIE 1: 20 | *** | ITALY | 0.62 | 141,52 | *** | ***** | ***** |
2017-09-14 | 8541290000 | TRANSISTOR EXCEPT phototransistor: SILICON LDMOS transistor VOLTAGE 50V, 125W OUTPUT, replacement parts inserted into RF amplifier DIGITAL SIGNAL DVB-T / T2. NXP SEMICONDUCTORS FREESCALE MRFE6VP8600HSR5 MRFE6VP8600HSR5 3 | *** | ITALY | 0.3 | 629,44 | *** | ***** | ***** |
2017-09-20 | 8541290000 | Transistor modules transistor module (IGBT) BASED TRANSISTORS, A PART C 2-wheeling diode. MAXIMUM POWER OF DISPERSION 790 BT OPERATING CURRENT IC NOM = 150A / ICRM = 300A, OPERATING VOLTAGE 1200V. It is designed for use in inverters | *** | ITALY | 12.55 | 2260,36 | *** | ***** | ***** |
2017-09-20 | 8541290000 | Transistor modules IGBT modules TRANZISTORNYE- SEMICONDUCTOR DEVICE, POWER SUPPLY TO INCREASE IN INDUSTRIAL ELECTRONIC SYSTEMS. VOLTAGE 1200V NOT MILITARY. / TRANSISTORS / IGBT MODULE transistor module (IGBT / IGBT) STRUCTURES | *** | ITALY | 53.87 | 9851,95 | *** | ***** | ***** |
2017-09-20 | 8541290000 | Transistor modules transistor module (IGBT) BASED TRANSISTORS, A PART C 2-wheeling diode. MAXIMUM power dissipation of 6.25 KW, the operating voltage 1700 V intended for use in inverters, circuit breaker and so on. NOT SCRAP AL | *** | ITALY | 29.6 | 8209,21 | *** | ***** | ***** |
2017-09-20 | 8541290000 | Transistor modules IGBT modules. "Transistor modules - ON IGBT-BASED TRANSISTORS ARE DESIGNED FOR HIGH SWITCHING IN THE COMPOSITION OF POWER DRIVE ELECTRIC MOTORS AND STATIC CONVERTERS FOR A inverter, interrupting.. | *** | ITALY | 442.4 | 110335,49 | *** | ***** | ***** |
2017-09-20 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR dissipation of 2W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container INFINEON TECHNOLOGIES AG INFINEON IRL6372P | *** | ITALY | 0 | 215,65 | *** | ***** | ***** |
2017-09-25 | 8541290000 | Transistor (EXCEPT phototransistor) for repair and maintenance of previously imported loading - unloading, storage equipment "BT EUROPE" TRANSISTOR 10W MODEL VRE125SF, TOYOTA MATERIAL HANDLING EUROPE LOGISTICS AB BT EUROPE 247451-004 1 | *** | ITALY | 3.23 | 952,36 | *** | ***** | ***** |
2017-09-27 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power dissipation 1W MORE SYSTEMS FOR INDUSTRIAL ELECTRONICS: Field transistors Single, free rate, power dissipation 330VT ARTICLE IRFP4227PBF -150SHT. : INFINEON TECHNOLOGIES ABSENT 0 | *** | ITALY | 1.27 | 188,65 | *** | ***** | ***** |