Transistor Import Data of Russia

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Lookup market share of companies import transistor under HS Code 8541290000 in Russia from Kazan and have in-depth market analysis of transistor import. Study market size and price of transistor under HS Code 8541290000 imports by Russia.

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DATE	HS_CODE	Product Description	Trademark	Country	Net Weight	Statistical Cost	Place	Shipper Name	Consignee Name
2017-11-07	8541290000	TRANSISTOR IRG4BC30FD-SPBF - FETs TIR (metal-insulator-conductor) Radio-electronic components of a semiconductor material other than the phototransistor, the power dissipation of 100 W, is designed to control the current in	ABSENT	***	23.85	9088,56	KAZAN	*****	*****
2017-11-07	8541290000	TRANSISTOR SPW17N80C3FKSA1 - TRANSISTOR N-channel powerful FIELD. MADE IN TECHNOLOGY "METAL - OXIDE - SEMICONDUCTOR". MAXIMUM power dissipation - 227 Tues The breakdown voltage of the drain-source 800 W. Drain Current 17 A MAXIMUM	ABSENT	***	40.158	10335,79	KAZAN	*****	*****
2017-11-07	8541290000	FIELD TRANSISTOR IRLR120NPBF TIR (metal- insulator - SEMICONDUCTOR) MOSFET, N-CHANNEL, high power (> 1W). TYPE OF MOUNTING - SURFACE. VOLTAGE Drain-Source Breakdown - 100 V; The breakdown voltage of the gate-source - 16 V; Power Dissipation	ABSENT	***	1.332	471,91	KAZAN	*****	*****
2017-11-07	8541290000	TRANSISTOR SPP20N65C3XKSA1 - TRANSISTOR N-channel, powerful, field. MADE IN TECHNOLOGY "METAL - OXIDE - SEMICONDUCTOR". TYPE OF MOUNTING - SURFACE. MAXIMUM power dissipation - 208 W; The breakdown voltage of the drain-source - 650; Drain current	ABSENT	***	4.122	2936,31	KAZAN	*****	*****
2017-11-07	8541290000	TRANSISTOR IRF7842PBF - TRANSISTOR N-channel, powerful, field. MADE IN TECHNOLOGY "METAL - OXIDE - SEMICONDUCTOR". TYPE OF MOUNTING - SURFACE. MAXIMUM POWER OF DISPERSION - 2.5 W; The breakdown voltage of the drain-source - 40 V; The drain current of 18 A.	ABSENT	***	0.504	338,7	KAZAN	*****	*****
2017-11-07	8541290000	TRANSISTOR IPB009N03LGATMA1 - TRANSISTOR N-channel, powerful, field. MADE IN TECHNOLOGY "METAL - OXIDE - SEMICONDUCTOR". TYPE OF MOUNTING - SURFACE. MAXIMUM power dissipation - 250 W; The breakdown voltage of the drain-source - 30 V; Drain current	ABSENT	***	2.745	1037,03	KAZAN	*****	*****
2017-11-08	8541290000	Parts for assemblage and repair of car amplifier audio frequency metal-oxide field effect transistors IRF 3205 MOSFET 200W (MOS METALL OCSIDE) 2600 PCS. SUPPLIED AS COMPONENTS for their own needs PREDPRIYATIYA.POGRESHNOST SHIPMENT +/- 5% of CO	PRIDE	KOREA REPUBLIC OF	5.2	390	KAZAN	*****	*****
2017-11-10	8541290000	TRANSISTOR FQD19N10TM semiconductor metal-oxide-FILM WITH N-type channels are intended for use in the pulse converter voltage to power LED lamps produced by LLC "LEDEL". APPLY power supply (DRIVE	ABSENT	***	5.145	2031,58	KAZAN	*****	*****
2017-11-28	8541290000	TRANSISTOR IPD80R1K0CEATMA1 semiconductor metal-oxide-FILM WITH N-type channels are intended for use in the pulse converter voltage to power LED lamps produced by LLC "LEDEL". APPLY power source	ABSENT	***	6.595	3130,31	KAZAN	*****	*****

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Our transistor import data of Russia and market research report covers market priceof transistor and market share of Russian companies. This helps you to do market analysis on the basis of price, company, etc. efficiently and gain knowledge on market size of transistor in Russia. Few shipment records with a small number of important columns from Russia import data of transistor are given above. Other hidden fields such as Russian Importer Name with Address, Foreign Importer Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of transistor. To view more shipment records of transistor import data of Russia, you can set a filter by Country Name, HS Code and Place.

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