DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: | INFINEON | *** | 64.022 | 8640 | ST PETERSBURG | ***** | ***** |
2017-09-03 | 8541290000 | Semiconductor devices: transistors, for PCB mounting | VISHAY | *** | 58.57 | 22607,21 | ST PETERSBURG | ***** | ***** |
2017-09-11 | 8541290000 | Transistors, EXCEPT phototransistor SEMICONDUCTOR TRANSISTOR, for PCB mounting in industrial single-board computer, power dissipation 40 W TYPE SILICON POLUPROVODNIKA- | TOSHIBA | *** | 56.72 | 14070 | ST PETERSBURG | ***** | ***** |
2017-09-17 | 8541290000 | AVERAGE POWER TRANSISTORS: N-CHANNEL "TK10A80W, S4X (S" COMMON dissipation 40W, collector-emitter voltage 80V and the breakdown voltage of the drain-source 800V TYPE SEMICONDUCTOR - SILICON.. | TOSHIBA | *** | 107.645 | 23370 | ST PETERSBURG | ***** | ***** |
2017-09-26 | 8541290000 | UNIVERSAL Bipolar Transistor "VD140-16" With the PNP-TRANSITION, with a total power dissipation 12.5 BT, collector-emitter voltage 80V, 1.5A DIRECT CURRENT COLLECTOR, intended for use in linear amplifiers and switches APPENDIX | ST | *** | 66.3 | 2429,43 | ST PETERSBURG | ***** | ***** |
2017-09-27 | 8541290000 | MODULES insulated-gate bipolar transistor (IGBT): "BSM200GA170DLC" With the collector-emitter voltage 1700V, C 1920VT power dissipation; "FF300R17KE4" With the collector-emitter voltage 1700V, C Power Dissipation 1800 W; "FF450R12KT4" | INFINEON | *** | 225.057 | 43141,25 | ST PETERSBURG | ***** | ***** |
2017-09-27 | 8541290000 | MODULES insulated-gate bipolar transistor (IGBT), DISPERSION OVER POWER 1W. (NOT SCRAP ELECTRIC) | WITHOUT A TRADEMARK | *** | 57.888 | 13036,98 | ST PETERSBURG | ***** | ***** |
2017-09-27 | 8541290000 | POWERFUL N-channel MOS transistors: "IPD50R3K0CEAUMA1" and "IPD50R3K0CEBTMA1" SERIES COOLMOS CE COMMON dissipation of 26 watts and the breakdown voltage of the drain-source 550V; "TK15A20D, S4X (S" Since power dissipation of 35W, drain-source voltage 200V | INFINEON, COOLMOS | *** | 470.733 | 44806,92 | ST PETERSBURG | ***** | ***** |
2017-11-01 | 8541290000 | Transistors, phototransistor EXCEPT: Transistor SEMICONDUCTOR ASSEMBLY TYPE SEMICONDUCTOR - silicon for use in the production of circuit boards, power dissipation 3 W | NXP | *** | 2.32 | 52,05 | ST PETERSBURG | ***** | ***** |
2017-11-01 | 8541290000 | Transistors, phototransistor EXCEPT: SEMICONDUCTOR TRANSISTOR TYPE SEMICONDUCTOR - silicon for use in the production of circuit boards, power dissipation 4 W | ONS | *** | 0.26 | 5,87 | ST PETERSBURG | ***** | ***** |