DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541210000 | SOBORKA TRANSISTORS WITH TWO fixed resistor assembly is in the polymeric housing with a projecting contact. POWER RASSESVANIYA 0.4 Tues. MODEL PUMD3,125 ART: A2C00039778 NXP NXP 10000 | *** | MALAYSIA | 0.9 | 224,54 | *** | ***** | ***** |
2017-09-01 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power dissipation 1W MORE SYSTEMS FOR INDUSTRIAL ELECTRONICS: Field transistors Single, free rate, power dissipation 70W ARTICLE STD15NF10T4-1710SHT. : STMICROELECTRONICS CHINA ABSENT 0 | *** | MALAYSIA | 0.99 | 416,15 | *** | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current 34 A, | *** | MALAYSIA | 1.62 | 1512 | *** | ***** | ***** |
2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of less than 1W, for mounting on printed circuit boards for use in electronic equipment RADIO: FIELD insulated gate, NPN-CHANNEL, power dissipation 0.3W max. Allowable current of 0.1 A, MAK | *** | MALAYSIA | 0.11 | 488,21 | *** | ***** | ***** |
2017-09-04 | 8541210000 | Semiconductor devices: transistors, phototransistor EXCEPT TYPE SEMICONDUCTOR - silicon, for PCB mounting electronic devices, power dissipation 0.30 Tues. : NEXPERIA NEXPERIA NEXPERIA PUMB10,115 NO 15000 | *** | MALAYSIA | 0.58 | 300 | *** | ***** | ***** |
2017-09-04 | 8541210000 | Semiconductor devices: transistors, TYPE SEMICONDUCTOR - silicon, is used for PCB mounting electronic devices, power dissipation 0,15VT: ON SEMICONDUCTOR ONS ONS MMBT3906WT1G NO 21000 | *** | MALAYSIA | 0.63 | 210 | *** | ***** | ***** |
2017-09-06 | 8541210000 | Bipolar transistors, for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. Rated at Colle | *** | MALAYSIA | 0 | 5,6 | *** | ***** | ***** |
2017-09-06 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | 0.02 | 23,62 | *** | ***** | ***** |
2017-09-06 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | 0 | 8,45 | *** | ***** | ***** |
2017-09-06 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MALAYSIA | 0.04 | 96,02 | *** | ***** | ***** |