DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-10 | 8541290000 | MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 84 VDC | *** | MEXICO | 0.04 | 151,39 | *** | ***** | ***** |
2017-09-10 | 8541210000 | Bipolar transistors, for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Rated at CALL | *** | MEXICO | 0 | 4,73 | *** | ***** | ***** |
2017-09-10 | 8541210000 | Bipolar transistors, for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Rated at CALL | *** | MEXICO | 0.02 | 7,83 | *** | ***** | ***** |
2017-09-10 | 8541210000 | Bipolar transistors, for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Rated at CALL | *** | MEXICO | 0.01 | 21,76 | *** | ***** | ***** |
2017-09-10 | 8541290000 | MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 30 V | *** | MEXICO | 0.02 | 24,17 | *** | ***** | ***** |
2017-09-12 | 8541210000 | Bipolar transistors, power dissipation of 150 MW, voltage 50 V, semiconductor - silicon is intended for the generation and amplification of electrical oscillations,: TOSHIBA TOSHIBA, PHILIPPINES RN1107MFV 1000 | *** | MEXICO | 0.6 | 93,66 | *** | ***** | ***** |
2017-09-14 | 8541290000 | Transistors, power dissipation 1.3 W FOR ELECTRICITY METERS, DO NOT SCRAP ELECTRIC, DO NOT WASTE; NO MILITARY OR DUAL-USE / / Not for equipment operating in explosive atmospheres / INTERNATIONAL RECTIFIER INTERNATIO | *** | MEXICO | 1.05 | 840 | *** | ***** | ***** |
2017-09-15 | 8541290000 | MOSFET, which is a transistor with an insulated gate, which controls the voltage, because, because of the insulated control electrode (gate) such transistors have a very high input impedance, are intended: PAC | *** | MEXICO | 0.05 | 80,1 | *** | ***** | ***** |
2017-09-15 | 8541290000 | TRANSISTORS MOS TRANZISTOR- / DATA / -ID - CONTINUOUS LEAKAGE CURRENT - 18 A, RDS ON - resistance of the drain-source 110 MOHMS, VGS - gate-source voltage of 20 V, QG - gate charge 21.3 NC, the recession 16 NS, MINIMUM Operating temperature - 55 C, PD - | *** | MEXICO | 0.11 | 199,78 | *** | ***** | ***** |
2017-09-15 | 8541210000 | BIPOLAR TRANSISTORS TRANZISTORY- / DATA / -Voltage collector-emitter (VCEO), MAX 45 V, collector-base voltage (VCBO) 50 V, the emitter-base VOLTAGE (VEBO) is 5 V, a maximum constant collector current is 0.5 A, the product of the effort | *** | MEXICO | 6.2 | 1000,45 | *** | ***** | ***** |