DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-04 | 8541290000 | SEMICONDUCTOR TRANSISTORS, power dissipation 32-375 BT imported as raw materials (materials) for assembling the electronic module (card), studio flash units, portable mains power supply, the device raising and lowering of flash bulbs, Transis | *** | UNITED STATES | 26.2 | 7215,75 | *** | ***** | ***** |
2017-09-04 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 W, (NOT SCRAP ELECTRIC) CLASSIFICATION CODE 63 4012, SM. ADDITION. TRANSISTOR, voltage 45 V, 0.5 POWER Tues FOR NXP BC807 100 NONE SURFACE PCB | *** | UNITED STATES | 0.04 | 3,97 | *** | ***** | ***** |
2017-09-04 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 W, (NOT SCRAP ELECTRIC) CLASSIFICATION CODE 63 4012, SM. ADDITION. Transistors, voltage 20 V, power 0.5 Tues, for surface mounting on printed circuit boards INT.RECTIFIER NO IRF73 | *** | UNITED STATES | 0.02 | 2,93 | *** | ***** | ***** |
2017-09-04 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 W, (NOT SCRAP ELECTRIC) CLASSIFICATION CODE 63 4012, SM. ADDITION. TRANSISTOR, 48V, power 0.5 Tues, for surface mounting on printed circuit boards DIODES INC. NO ZVN4424 | *** | UNITED STATES | 0.07 | 12,67 | *** | ***** | ***** |
2017-09-04 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 W, (NOT SCRAP ELECTRIC) CLASSIFICATION CODE 63 4012, SM. ADDITION. Transistors, voltage 12 V, power 0.5 Tues, for surface mounting on printed circuit boards INT.RECTIFIER NO IRF73 | *** | UNITED STATES | 0.05 | 15,28 | *** | ***** | ***** |
2017-09-05 | 8541290000 | FET TRANSISTORS U431 PRODUCED BY VISHAY is a multifunctional bipolar transistors. ADVANTAGES: LOW OPERATING CURRENT AND LOW VOLTAGE. Apply with automated processing of data, PORTABLE TELECOMMUNICATIONS | *** | UNITED STATES | 0.31 | 8650,7 | *** | ***** | ***** |
2017-09-05 | 8541210000 | Bipolar transistors, power dissipation of 450 MW, voltage 24 V, semiconductor - silicon is intended for the generation and amplification of electrical oscillations,: NEXPERIA NEXPERIA, CHINA BFU530R 3 | *** | UNITED STATES | 0 | 1,41 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Field-effect transistors, power dissipation 104 W, 20 V, semiconductor - silicon are designed for logic circuits to control the parameters of their ENERGY,: VISHAY INTERTECHNOLOGY VISHAY INTERTECHNOLOGY, CHINA SIR440DP-T1-GE3 300 | *** | UNITED STATES | 0.05 | 650,64 | *** | ***** | ***** |
2017-09-05 | 8541290000 | SEMICONDUCTOR DEVICES: Field transistors, ARE NOT phototransistor power dissipation 400W is designed for surface mount board industrial electronic devices not SCRAP ELECTRIC TYPE SEMICONDUCTOR -: SILICON | *** | UNITED STATES | 0.17 | 7117,25 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Transistors, phototransistors NO: MODULE Transistor (two transistors in one case) FOR SWITCHING CONVERTERS LOAD FREQUENCY CURRENTS VLT, in KOMPLEKTK with fasteners, CURRENT 600 A, MODULE FOR SWITCHING TRANSISTOR LOAD CURRENT TRANSDUCERS H | *** | UNITED STATES | 5.03 | 824,61 | *** | ***** | ***** |