DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-11 | 8541290000 | COMPONENTS FOR MEDICAL X-ray equipment: semiconductor products IGBT modules (the article is an insulated-gate bipolar transistor - TROHELEKTRODNY power semiconductor devices that combine two transistors IN ONE IN | *** | ITALY | 1.2 | 393,59 | *** | ***** | ***** |
2017-09-20 | 8541290000 | Transistor modules transistor module (IGBT) BASED TRANSISTORS, A PART C 2-wheeling diode. MAXIMUM POWER OF DISPERSION 790 BT OPERATING CURRENT IC NOM = 150A / ICRM = 300A, OPERATING VOLTAGE 1200V. It is designed for use in inverters | *** | ITALY | 12.55 | 2260,36 | *** | ***** | ***** |
2017-09-20 | 8541290000 | Transistor modules IGBT modules TRANZISTORNYE- SEMICONDUCTOR DEVICE, POWER SUPPLY TO INCREASE IN INDUSTRIAL ELECTRONIC SYSTEMS. VOLTAGE 1200V NOT MILITARY. / TRANSISTORS / IGBT MODULE transistor module (IGBT / IGBT) STRUCTURES | *** | ITALY | 53.87 | 9851,95 | *** | ***** | ***** |
2017-09-20 | 8541290000 | Transistor modules transistor module (IGBT) BASED TRANSISTORS, A PART C 2-wheeling diode. MAXIMUM power dissipation of 6.25 KW, the operating voltage 1700 V intended for use in inverters, circuit breaker and so on. NOT SCRAP AL | *** | ITALY | 29.6 | 8209,21 | *** | ***** | ***** |
2017-09-20 | 8541290000 | Transistor modules IGBT modules. "Transistor modules - ON IGBT-BASED TRANSISTORS ARE DESIGNED FOR HIGH SWITCHING IN THE COMPOSITION OF POWER DRIVE ELECTRIC MOTORS AND STATIC CONVERTERS FOR A inverter, interrupting.. | *** | ITALY | 442.4 | 110335,49 | *** | ***** | ***** |
2017-09-27 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power dissipation 1W MORE SYSTEMS FOR INDUSTRIAL ELECTRONICS: Field transistors Single, free rate, power dissipation 330VT ARTICLE IRFP4227PBF -150SHT. : INFINEON TECHNOLOGIES ABSENT 0 | *** | ITALY | 1.27 | 188,65 | *** | ***** | ***** |
2017-09-27 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power dissipation 1W MORE SYSTEMS FOR INDUSTRIAL ELECTRONICS: Field transistors Single, free rate, power dissipation 83VT ARTICLE IRLZ44NPBF-800SHT. : INFINEON TECHNOLOGIES ABSENT 0 | *** | ITALY | 2.8 | 184,32 | *** | ***** | ***** |
2017-09-27 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power dissipation 1W MORE SYSTEMS FOR INDUSTRIAL ELECTRONICS: Field transistors Single, free rate, power dissipation 74VT ARTICLE IRF630-1500SHT. : "ST MICROELECTRONICS" ABSENT 0 | *** | ITALY | 4.85 | 236,08 | *** | ***** | ***** |
2017-09-27 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power dissipation 1W MORE SYSTEMS FOR INDUSTRIAL ELECTRONICS: SINGLE IGBT transistor modules, free rate, power dissipation 260VT ARTICLE RJH60F5DPK-00 # T0-720SHT. : RENESAS TECHNOLOGY ABSENT 0 | *** | ITALY | 4.03 | 1343,46 | *** | ***** | ***** |
2017-09-27 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power dissipation 1W MORE SYSTEMS FOR INDUSTRIAL ELECTRONICS: Field transistors Single, frequency present, Article STD7NM80 90W-2500SHT, IRF9540PBF 150W-550SHT, IRFI4227PBF 46VT-1800SHT, STN1NK60Z 3,3VT-4000...:: | *** | ITALY | 13.7 | 5107,57 | *** | ***** | ***** |