| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-05 | 8541100009 | DIODES EXCEPT photodiodes or light emitting diodes (LED): DIODE VR - inverse voltage: 600 V IF - DIRECT CURRENT: 1 A VF - Forward voltage: 1.1 V Max Surge Current: 40 A IR - REVERSE CURRENT: 1 UA RECOVERY TIME: 1.8 US DIODE TYPE OF INSTALLATION: SCR | *** | INDIA | 79.87 | 26042 | *** | ***** | ***** |
| 2017-09-08 | 8541100009 | Diode modules in a plastic case TOTAL - 100 pcs, pack.. Cards. CDF. Palletized pressing CHIP, WEIGHT PAN recorded WEIGHT OF THE GOODS number 17. PROTECTION MODULE - Diode Modules - LED and diodes combined in a single package, voltage 24 V DC / DIOD | *** | INDIA | 0.3 | 89,9 | *** | ***** | ***** |
| 2017-09-14 | 8541210000 | Transistors, designed for use in electrotechnical assemblies GENERAL PURPOSE TYPE SEMICONDUCTOR-silicon: transistors, bipolar, polar NPN, MAXIMUM collector-emitter voltage 20 volts Maximum DC Current Kollek | *** | INDIA | 0.06 | 21,24 | *** | ***** | ***** |
| 2017-09-14 | 8541401000 | LEDs designed for use in electrotechnical assemblies GENERAL PURPOSE: light-emitting diodes, is not contained in a set of wires, power supplies and switches, COLOR glow green, 570 nm, forward voltage 2.1 Wohl | *** | INDIA | 0.01 | 29,3 | *** | ***** | ***** |
| 2017-09-14 | 8541210000 | TRANSISTORS, SUITABLE FOR USE IN ELECTRICAL ASSEMBLY FOR GENERAL PURPOSE-TYPE SEMICONDUCTOR SILICON: MOSFET, N-CHANNEL, the maximum drain-source voltage (VDS) 20 volts, continuous drain current (ID) 3.9A, BODY SOT23-3, | *** | INDIA | 0.01 | 55,93 | *** | ***** | ***** |
| 2017-09-14 | 8541100009 | DIODES, designed for use in electrotechnical assemblies GENERAL PURPOSE Zener diodes, silicon, BREAKDOWN VOLTAGE TUNNEL PN-TRANSITION 24V, power dissipation of 1.3W. Used in the device SUPPLY AND STABILIZATION. : DIODES, | *** | INDIA | 0.01 | 3,85 | *** | ***** | ***** |
| 2017-09-14 | 8541409000 | Semiconductor devices, intended for use in electrotechnical assemblies GENERAL PURPOSE optical sensor, the output stage to a phototransistor, a working distance 5.08MM, the operating voltage of 30 volts DC, MAKSMMALNY P | *** | INDIA | 0.01 | 79,3 | *** | ***** | ***** |
| 2017-09-20 | 8541100009 | Other diodes, photodiodes THAN OR light emitting diode (LED), for production equipment: a diode bridge INDUSTRIAL APPLICATIONS, use on production equipment. Maximum DC reverse voltage, V MAX 1200 IMPU | *** | INDIA | 48 | 5670 | *** | ***** | ***** |
| 2017-09-20 | 8541100009 | DIODES OTHER THAN OR photodiode light emitting diode (LED), COMPONENTS FOR ELECTRONICS AND MICROELECTRONICS: DIODE VR - inverse voltage: 400 V IF - DIRECT CURRENT: 1.5 A VF - Forward voltage: 1.15 V Max Surge Current: 50 A VISHAY VISHAY S | *** | INDIA | 12 | 1500,15 | *** | ***** | ***** |
| 2017-11-28 | 8541100009 | BRIDGE DIODE: Maximum DC reverse voltage 1600 V, maximum positive rectified half-cycle), the current 36 A, the maximum allowable DIRECT CURRENT PULSE 400 A, maximum reverse current 10 ICA MAXIMUM forward voltage 1.2 V, | VISHAY | INDIA | 20 | 2900 | MOSCOW | ***** | ***** |